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STF25N60M2-EP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 18A TO220FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STF25N60M2-EP
- Description：MOSFET N-CH 600V 18A TO220FP
- Series：MDmesh™ M2-EP
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：188mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1090 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STF25N60M2-EP
Single FETs, MOSFETs Overview
The STF25N60M2-EP is an N-channel Power MOSFET utilizing MDmesh™ M2 EP technology in a TO-220FP package. It features a drain-source breakdown voltage of 600 V and a maximum on-resistance of 0.188 Ω at 25 °C. The device supports a continuous drain current of 18 A at 25 °C case temperature, with a pulsed current rating of 72 A. Total gate charge is typically 29 nC. Thermal resistance from junction to case is 4.2 °C/W, and the maximum operating junction temperature is 150 °C.
Single FETs, MOSFETs Feature Summary
- Extremely low gate charge for optimized switching performance
- Excellent output capacitance profile reducing turn-off losses
- 100% avalanche tested for ruggedness
- Integrated Zener protection between gate and source
Single FETs, MOSFETs Applications
- Very high frequency converters (f > 150 kHz)
- General switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific order code STF25N60M2-EP against the manufacturer's latest documentation to confirm current production status and environmental compliance grades. Ensure that the required thermal management aligns with the specified junction-to-case thermal resistance values provided in the datasheet electrical ratings section.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high-frequency operation above 150 kHz where low turn-off switching losses are critical. The TO-220FP package provides robust through-hole mounting capabilities suitable for applications demanding high reliability and efficient heat dissipation under continuous load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M2 Enhanced Performance series by STMicroelectronics. It represents a specialized variant designed for high-frequency power conversion environments, distinguishing itself through optimized strip layout and vertical structure improvements compared to standard MOSFET offerings.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other MDmesh M2 EP variants such as STF20N60M2-EP or STF27N60M2-EP, provided their specific electrical ratings match the design requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
