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STF80N10F7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 100V 40A TO220FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STF80N10F7
- Description：MOSFET N-CH 100V 40A TO220FP
- Series：DeepGATE™, STripFET™ VII
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STF80N10F7
Single FETs, MOSFETs Overview
The STF80N10F7 is an N-channel enhancement mode Power MOSFET from the STripFET F7 series. It features a maximum drain-source voltage of 100 V and a continuous drain current of 80 A. The device utilizes enhanced trench gate technology to achieve a typical on-state resistance of 6.8 mΩ. It operates within a temperature range of -55 °C to +175 °C, with a maximum power dissipation of 30 W in a TO-220 package.
Single FETs, MOSFETs Feature Summary
- Utilizes STripFET F7 technology for low on-state resistance
- Enhanced trench gate structure reduces internal capacitance
- High avalanche ruggedness capability
- Low Crss/Ciss ratio improves EMI performance
Single FETs, MOSFETs Applications
- Flyback converter synchronous rectification
- General purpose power switching
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status through manufacturer documentation. Ensure the TO-220 package variant matches the required mounting style. Cross-reference the part number with authorized distributors to validate authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high efficiency at 100 V ratings. The low gate charge supports faster switching speeds. Compare Rds(on) values against similar STripFET models for optimal thermal management. Consider the TO-220 package constraints for heat dissipation requirements in the target design.
Single FETs, MOSFETs Part Context
This part belongs to the STripFET F7 family, designed for low-voltage power applications. It shares technological similarities with the STD100N10F7 and STF100N10F7. The series emphasizes improved figure of merit (FoM) over previous generations. It targets cost-sensitive designs needing robust performance.
Single FETs, MOSFETs Replacement Considerations
STF100N10F7 offers identical electrical specifications in the same package. STD100N10F7 provides the same performance in a DPAK footprint. Verify pin compatibility before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
