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STFI24NM60N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 17A I2PAKFP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STFI24NM60N
- Description：MOSFET N-CH 600V 17A I2PAKFP
- Series：MDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-281 (I2PAKFP)
- Package / Case：TO-262-3 Full Pack, I2PAK
Single FETs, MOSFETs datasheet and documents for STFI24NM60N
Single FETs, MOSFETs Overview
STFI24NM60N is an N-channel enhancement mode MOSFET from the MDmesh M2 series. It features a maximum drain-source voltage of 650 V and a continuous drain current of 18 A. The device has a maximum on-resistance of 190 mΩ and a typical gate charge of 29 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C, with a maximum power dissipation of 30 W. The component uses an I2PAKFP package for through-hole mounting.
Single FETs, MOSFETs Feature Summary
- Utilizes second-generation MDmesh technology combining vertical structure with strip layout for low on-resistance and gate charge
- Subjected to 100% avalanche testing for enhanced reliability
- Features low input capacitance and low gate input resistance
Single FETs, MOSFETs Applications
- High-efficiency converters
- Industrial applications requiring robust switching performance
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official STMicroelectronics documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with thermal management requirements given the 30 W power dissipation limit in the I2PAKFP package. Cross-reference datasheet parameters for threshold voltage and gate charge to validate suitability for the intended drive circuitry.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage blocking capability and reliable avalanche ruggedness. The MDmesh M2 technology offers improved efficiency compared to standard planar MOSFETs. Consider the through-hole I2PAKFP package for applications prioritizing mechanical stability and ease of assembly over surface mount density.
Single FETs, MOSFETs Part Context
The STFI24NM60N belongs to the MDmesh M2 family of power MOSFETs from STMicroelectronics. This series is engineered to provide superior performance in terms of conduction and switching losses. The I2PAKFP variant provides a robust solution for medium-power applications where through-hole mounting is preferred.
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