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Product Detailed Parameters
- Description：IC SWITCH SPST-NOX2 1.3OHM 10QFN
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- Switch Circuit：SPST - NO
- Multiplexer/Demultiplexer Circuit：1:01
- On-State Resistance (Max)：1.3Ohm
- Channel-to-Channel Matching (ΔRon)：10mOhm
- Voltage - Supply, Single (V+)：1.65V ~ 4.3V
- Voltage - Supply, Dual (V±)：-
- Switch Time (Ton, Toff) (Max)：55ns, 30ns
- -3db Bandwidth：58MHz
- Charge Injection：49pC
- Channel Capacitance (CS(off), CD(off))：85pF
- Current - Leakage (IS(off)) (Max)：100nA
- Crosstalk：-72dB @ 100kHz
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：10-UFQFN
- Supplier Device Package：10-QFN (1.8x1.4)
- Number of Circuits：2
- Grade：-
- Qualification：-
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Overview
The STG4210QTR is a high-voltage, high-speed half-bridge gate driver designed for Gallium Nitride (GaN) power switches. It operates with a supply voltage range of 9.2 V to 18 V and supports input voltages up to 20 V. The device features two drivers with two outputs, housed in a QFN-18 package. Key electrical parameters include a rise time of 22 ns, a fall time of 11 ns, and a maximum propagation delay of 60 ns. The off-state leakage current is specified at 7 Ohms equivalent resistance. It functions within a temperature range of -40°C to +125°C and draws a working supply current of 920 uA.
Feature Summary
- Optimized for driving GaN power switches with high-speed switching capabilities
- Integrated half-bridge configuration providing dual independent driver channels
- Supports high common-mode transient immunity suitable for high-voltage applications
Applications
- Gate driving for Gallium Nitride (GaN) field-effect transistors
- High-frequency power conversion circuits
- Industrial motor drives requiring fast switching speeds
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's official datasheet before procurement. Confirm that the QFN-18 footprint matches the target PCB design. Ensure compliance with RoHS directives as indicated in the product specifications. Cross-reference the part number with authorized distributors to confirm authenticity and availability status.
Selection Notes
Select this component when designing circuits that require precise timing control for GaN devices. The low rise and fall times make it suitable for high-frequency operations. Consider the thermal performance of the QFN-18 package for heat dissipation requirements. Verify that the supply voltage constraints align with the system's power rail specifications.
Part Context
This part belongs to STMicroelectronics' gate driver portfolio, specifically tailored for next-generation wide bandgap semiconductors. It complements other power management ICs by providing the necessary interface between low-voltage control logic and high-voltage power stages. The series emphasizes efficiency and speed in modern power electronics designs.
Replacement Considerations
Check for direct pin-to-pin replacements within the same family or from other manufacturers offering similar GaN driver specifications. Ensure that any substitute maintains the same voltage ratings, package type, and switching speed characteristics to avoid redesigning the surrounding circuitry.
