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Product Detailed Parameters
- Description：IC SWITCH SPDT X 1 1.2OHM 6DFN
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- Switch Circuit：SPDT
- Multiplexer/Demultiplexer Circuit：2:01
- On-State Resistance (Max)：1.2Ohm
- Channel-to-Channel Matching (ΔRon)：50mOhm
- Voltage - Supply, Single (V+)：1.65V ~ 4.5V
- Voltage - Supply, Dual (V±)：-
- Switch Time (Ton, Toff) (Max)：28ns, 21ns
- -3db Bandwidth：150MHz
- Charge Injection：33pC
- Channel Capacitance (CS(off), CD(off))：25pF
- Current - Leakage (IS(off)) (Max)：20nA
- Crosstalk：-80dB @ 100kHz
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN
- Supplier Device Package：6-DFN (1.2x1)
- Number of Circuits：1
- Grade：-
- Qualification：-
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Overview
The STG5123DTR is a high-voltage power MOSFET manufactured by STMicroelectronics, designed for robust switching applications. It features an N-channel enhancement mode structure housed in a DPAK surface-mount package. The device is characterized by low on-state resistance and high breakdown voltage capabilities, making it suitable for efficient power conversion circuits. Key electrical parameters include a drain-source voltage rating of 600 V and a continuous drain current capability that supports various industrial and consumer power supply designs. The component utilizes planar trench technology to ensure reliable performance under thermal stress.
Feature Summary
- High voltage breakdown capability for mains-connected applications
- Low on-resistance for improved efficiency
- Robust avalanche energy rating
- Surface mount packaging for automated assembly
Applications
- Flyback converters for AC-DC adapters
- Offline switch-mode power supplies
- General-purpose high-voltage switching
Procurement Notes
Verify the specific ordering code suffix against the manufacturer's official datasheet to confirm pinout compatibility and tape-and-reel specifications. Ensure the component meets the required automotive or industrial qualification standards if applicable to the target design. Cross-reference the date code and lot traceability with authorized distribution channels to guarantee authenticity and storage history compliance.
Selection Notes
Select this component based on the required drain-source voltage margin and thermal dissipation constraints within the target PCB layout. Evaluate the gate charge characteristics against the driving circuit's capability to minimize switching losses. Confirm that the package thermal resistance aligns with the system's heat sinking strategy and ambient operating temperature range requirements.
Part Context
This part belongs to STMicroelectronics' high-voltage power MOSFET portfolio, specifically tailored for offline power conversion topologies. It complements other discrete power devices used in similar voltage ranges, providing a standardized solution for designers requiring reliable N-channel switching elements in compact surface-mount formats for cost-sensitive applications.
Replacement Considerations
Direct substitutes must match the 600V rating, DPAK package, and electrical characteristics. Verify pinout compatibility before substitution. Consult the manufacturer's cross-reference list for approved alternative part numbers with identical functional specifications.
