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The STG6384QTR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD technology. It drives power MOSFETs or IGBTs with a floating high-side section supporting up to 600 V rails. The device provides 650 mA sink and 400 mA source output currents, with rise/fall times of 50 ns/30 ns under 1 nF load. It features CMOS/TTL compatible inputs, integrated bootstrap diode, UVLO protection, and user-tunable deadtime via an external resistor on the DT/SD pin. Operating temperature ranges from -40°C to +125°C in SO-8 tape and reel packaging.
Verify the exact suffix 'QTR' against official STMicroelectronics documentation to confirm package type (SO-8) and reel specifications. Ensure the component meets automotive qualification standards if required for the specific application environment. Cross-reference datasheet revision numbers to validate parameter consistency.
Select this component when a robust half-bridge driver with high dV/dt immunity and integrated bootstrap functionality is needed. The single-input configuration simplifies control logic but requires careful timing management. Verify that the external deadtime resistor values align with the desired switching frequency and cross-conduction prevention requirements.
The STG6384QTR belongs to the L6384E family of high-voltage gate drivers. It shares core electrical characteristics with the L6384ED and L6384ED013TR variants, differing primarily in packaging and potential automotive-grade qualification indicated by the 'G' and 'Q' designators. It serves as a direct replacement for standard L6384E devices in space-constrained designs requiring tape-and-reel delivery.
L6384ED013TR
Deadtime is set by connecting an external resistor between the DT/SD pin and ground.
The high-side floating section supports voltage rails up to 600 V.
Yes, the bootstrap diode is integrated inside the device to simplify the circuit design.