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STGAP2GSNCTR is listed in the Isolators - Gate Drivers range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is DIGITAL ISO 4KV 1CH GATE DVR 8SO. Review the specifications below when checking this part for your BOM.
The STGAP2GSNCTR is a single-channel, galvanically isolated gate driver designed for enhancement-mode Gallium Nitride (GaN) Field-Effect Transistors. It provides robust isolation between the high-voltage gate driving channel and low-voltage control circuitry. The device features a peak output current of 3 A and supports a maximum high-voltage rail of 1700 V. It operates within a temperature range of -40°C to +150°C and includes protection mechanisms such as thermal shutdown and standby functionality.
Verify the specific suffix 'CTR' corresponds to the required tape-and-reel packaging configuration for automated assembly. Confirm that the 8-pin SOIC package dimensions align with the target PCB footprint. Ensure the selected component meets the necessary insulation voltage ratings for the intended application safety standards.
Select this component when driving enhancement-mode GaN FETs requiring high isolation voltage up to 1700 V. Consider the 3 A peak current for fast switching transitions. Evaluate the need for separate sink/source pins if independent turn-on/turn-off optimization is required, in which case alternative pinouts may be more suitable.
This part belongs to the STGAP family of isolated gate drivers from STMicroelectronics. It is specifically engineered for wide-bandgap semiconductors like GaN, offering higher performance compared to standard silicon-based drivers. The series includes variants for SiC MOSFETs and different packaging options to suit various industrial and automotive applications.
Direct substitutes include other STMicroelectronics isolated GaN drivers within the STGAP series, such as the STGAP2GSN or STGAP2SICS, depending on current rating and pinout requirements. Verify compatibility with existing PCB layouts and control signals before substitution.
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