ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 14A 80W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 7A
- Power - Max：80 W
- Switching Energy：85µJ (off)
- Input Type：Standard
- Gate Charge：42 nC
- Td (on/off) @ 25°C：15ns/75ns
- Test Condition：480V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The STGB7NB60HDT4 is a PowerMESH IGBT featuring an N-channel configuration with a 600V collector-emitter voltage rating and a 7A continuous collector current capability. It utilizes a patented strip layout for high-frequency operation up to 120kHz, offering low on-voltage drop and low gate charge. The device is co-packaged with a TurboSwitch antiparallel diode and housed in a surface-mount D2PAK (TO-263) package within a tape and reel format.
Feature Summary
- Optimized for very high frequency applications through reduced switching times
- Co-packaged with a TurboSwitch antiparallel diode for improved performance
- Features low on-state voltage drop and low gate charge characteristics
Applications
- High frequency motor controls
- SMPS and PFC in hard switch topologies
- Resonant topology power supplies
Procurement Notes
Verify the component status as obsolete before initiating procurement. Confirm that the specific T4 suffix corresponds to the tape and reel packaging variant. Ensure compatibility with existing thermal management solutions designed for the D2PAK footprint. Review updated datasheets for any revised absolute maximum ratings or replacement recommendations from the manufacturer.
Selection Notes
Select this component for designs requiring high-frequency switching capabilities below 120kHz. The integrated antiparallel diode simplifies circuit design by eliminating external freewheeling components. Consider the thermal resistance values when designing heat dissipation strategies for the surface-mount package.
Part Context
This part belongs to the PowerMESH IGBT family developed using advanced high-voltage technology. The 'H' suffix identifies it as a member optimized for high-frequency applications, balancing low switching times with low on-state voltage drop. It represents a discrete solution within STMicroelectronics' broader portfolio of insulated-gate bipolar transistors.
Replacement Considerations
STGF6NC60HD
FAQ
What does the 'H' suffix indicate for this IGBT?
The 'H' suffix identifies the device as part of a family optimized for high-frequency applications, achieving very low switching times.
Is the antiparallel diode included in the package?
Yes, the device is co-packaged with a TurboSwitch antiparallel diode.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
