STGD10NC60HDT4

$2.39

Description：IGBT 600V 20A 62W D2PAK
Series：PowerMESH™

SKU:f06f881ebd7f Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 20A 62W D2PAK
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：30 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
Power - Max：62 W
Switching Energy：31.8µJ (on), 95µJ (off)
Input Type：Standard
Gate Charge：19.2 nC
Td (on/off) @ 25°C：14.2ns/72ns
Test Condition：390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr)：22 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

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STGD10NC60HDT4

Overview

The STGD10NC60HDT4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes advanced PowerMESH technology to achieve an optimal balance between switching performance and low on-state behavior. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 10 A at 25°C. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 63 W. Packaged in a surface-mount DPAK-3 (TO-252-3) configuration, it includes a very soft ultra-fast recovery antiparallel diode.

Feature Summary

Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
Low CRES / CIES ratio eliminates cross-conduction susceptibility
Very soft ultra-fast recovery antiparallel diode for high-frequency operation

Applications

Resonant converter applications
Soft-switching applications
High-frequency power conversion circuits

Procurement Notes

Verify the specific suffix 'HDT4' against official STMicroelectronics documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with DPAK-3 footprint requirements during PCB layout. Cross-reference datasheet revisions to validate thermal resistance values and absolute maximum ratings before finalizing procurement orders.

Selection Notes

Select this component for designs requiring fast switching speeds and low conduction losses in resonant topologies. Compare the 10 A current rating and 600 V blocking capability against circuit demands. Evaluate the DPAK-3 package thermal performance relative to available heatsinking options. Confirm that the short-circuit withstand time meets system protection requirements.

Part Context

This IGBT belongs to the STGD series, characterized by high-speed switching capabilities derived from PowerMESH technology. It serves as a surface-mount alternative to through-hole variants like the STGP10NC60HD, offering similar electrical characteristics in a compact TO-252-3 package suitable for automated assembly processes.