STGP30H60DF

STGP30H60DF

$2.91
  • Description:IGBT TRENCH FS 600V 60A TO-220
  • Series:-

SKU:c3d053210531 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 60A TO-220
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 30A
  • Power - Max:260 W
  • Switching Energy:350µJ (on), 400µJ (off)
  • Input Type:Standard
  • Gate Charge:105 nC
  • Td (on/off) @ 25°C:50ns/160ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):110 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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STGP30H60DF

Overview

The STGP30H60DF is a high-speed trench gate field-stop Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics. It features a 600 V collector-emitter voltage rating and a continuous collector current of 30 A at 25 °C. The device utilizes an advanced proprietary structure to optimize the balance between conduction and switching losses, targeting high-frequency converter efficiency. Key electrical characteristics include a typical saturation voltage of 1.55 V at rated current and a maximum junction temperature of 175 °C. It is housed in a TO-220 package with through-hole mounting.

Feature Summary

  • Advanced trench gate field-stop technology for optimized switching performance
  • Positive VCE(sat) temperature coefficient enabling safe parallel operation
  • Ultrafast soft recovery antiparallel diode integrated within the module
  • Short-circuit rated capability for enhanced system robustness

Applications

  • High frequency power converters
  • Industrial motor drives
  • Switch mode power supplies

Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm pinout and thermal characteristics. Confirm RoHS compliance status as per the latest manufacturer documentation. Ensure the procurement channel provides authentic components with traceable origin to avoid counterfeits. Check for any recent lifecycle updates or obsolescence notices directly from STMicroelectronics before finalizing orders.

Selection Notes

Select this component when designing circuits requiring high switching frequencies and low conduction losses. The tight parameter distribution makes it suitable for applications demanding precise paralleling of multiple devices. Consider the thermal resistance and package type during heatsink design to maintain junction temperature within the 175 °C limit under peak load conditions.

Part Context

This IGBT belongs to the H series developed by STMicroelectronics, which focuses on achieving an optimum compromise between conduction and switching losses. The series is engineered to maximize efficiency in high-frequency converters. The trench gate field-stop structure distinguishes it from earlier planar technologies, offering improved tail current reduction and faster switching speeds.

Replacement Considerations

Direct replacements within the same family include STGP20H60DF and STGP10H60DF, though these offer lower current ratings. For higher current requirements, consider the STGP30V60DF from the V series, which offers very high speed characteristics. Verify pin compatibility and thermal parameters when substituting.

STGP30H60DFSTGP30H60DF
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