SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGW60H60DLFB is a single N-channel IGBT from the HB series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage of 600V and a continuous collector current of 80A at 25°C. The device has a maximum power dissipation of 375W in a TO-247 package. Key electrical parameters include a collector-emitter saturation voltage of 2.3V and a gate-emitter voltage range of ±20V. Operating temperatures span from -55°C to +175°C.
Verify component authenticity through authorized channels. Confirm datasheet revisions match specific manufacturing batches. Ensure storage conditions comply with moisture sensitivity levels. Validate that the TO-247 package dimensions align with PCB layout requirements before finalizing orders.
Select this model for high-power applications requiring efficient switching. Consider the 600V rating for medium-voltage circuits. Evaluate thermal management needs given the 375W dissipation limit. Compare against other HB series variants for specific speed or voltage trade-offs.
Part of the HB series IGBT family designed for industrial power electronics. Utilizes silicon technology for reliable operation. Manufactured by STMicroelectronics using advanced semiconductor processes. Commonly used in discrete power modules and standalone switching components.
STGW60H60DFB
The maximum collector-emitter voltage is 600V.
No, this component does not meet automotive standards.