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STK11C88-3N35I is listed in the Memory IC range at ChipApex. The manufacturer field lists Cypress Semiconductor Corp. Its product description is NON-VOLATILE SRAM, 32KX8, 35NS,. Review the specifications below when checking this part for your BOM.
Memory IC specifications for STK11C88-3N35I
- Description：NON-VOLATILE SRAM, 32KX8, 35NS,
- Series：*
- Mfr：Cypress Semiconductor Corp
- Package：Bulk
- Memory Type：-
- Memory Format：-
- Technology：-
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
Memory IC datasheet and documents for STK11C88-3N35I
Memory IC Overview
The STK11C88-3N35I is a 256 Kb nonvolatile static RAM manufactured by Cypress Semiconductor. It integrates fast static RAM with QuantumTrap technology for data retention. The device operates asynchronously with a maximum access time of 35 ns. It supports single 5 V power supply operation and functions within an industrial temperature range of -40 °C to +85 °C. The component utilizes a 28-pin PDIP package.
Memory IC Feature Summary
- Integrates unlimited-cycle SRAM with QuantumTrap nonvolatile memory cells for persistent data storage
- Provides automatic recall of stored data to SRAM upon power-up without software intervention
- Supports software-controlled store operations to transfer data from SRAM to nonvolatile elements
Memory IC Applications
- Industrial control systems requiring persistent configuration data
- Embedded applications needing reliable backup for critical parameters
- Automotive electronics demanding high reliability under varying temperatures
Memory IC Procurement Notes
Verify the specific suffix '3N35I' against official Cypress documentation to confirm the exact pinout, package dimensions, and electrical characteristics. Ensure compatibility with existing board layouts and thermal requirements before procurement.
Memory IC Selection Notes
Select this component when a combination of high-speed random access and nonvolatile retention is required in a single package. Consider the 256 Kb capacity and 35 ns speed for applications needing rapid data updates with long-term storage capabilities.
Memory IC Part Context
This part belongs to the STK11C series of nonvolatile SRAMs. These devices are designed to bridge the gap between volatile SRAM speed and nonvolatile EEPROM density, offering a robust solution for data integrity in embedded systems.
Memory IC Replacement Considerations
Check for direct substitutes such as the U631H64 or similar Cypress nvSRAM variants. Verify pin compatibility and functional equivalence before substitution.
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