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The STL76DN4LF7AG is an automotive-grade dual N-channel Power MOSFET utilizing STripFET F7 technology. It features a maximum drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 40 A at 25 °C. The typical static drain-source on-resistance (RDS(on)) is 5 mΩ at VGS = 10 V, with a maximum of 6 mΩ under the same conditions. Total gate charge (Qg) is typically 17 nC. The device operates within a junction temperature range of -55 °C to +175 °C and is housed in a PowerFLAT 5x6 double island package.
Verify component authenticity by cross-referencing the order code and marking against official STMicroelectronics documentation. Confirm that the specific revision level matches the required datasheet version. Ensure the packaging type corresponds to tape and reel specifications. Check for any environmental compliance markings relevant to the target application region.
Select this component when low on-state resistance and high avalanche ruggedness are critical for automotive designs. The dual channel configuration allows for efficient power management in compact layouts. Consider the thermal resistance characteristics and the specific requirements of the switching frequency and load current during circuit design.
This part belongs to the STL series of STripFET F7 Power MOSFETs from STMicroelectronics. It is specifically engineered for automotive environments, meeting stringent qualification standards. The PowerFLAT 5x6 package provides a compact footprint suitable for space-constrained PCB layouts while maintaining robust thermal performance.
Consult official STMicroelectronics documentation for confirmed substitute part numbers. Verify electrical parameters and pinout compatibility before implementation.