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STL9N65M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V POWERFLAT 5X5 H. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STL9N65M2
- Description：MOSFET N-CH 650V POWERFLAT 5X5 H
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for STL9N65M2
Single FETs, MOSFETs Overview
The STL9N65M2 is an N-channel Power MOSFET developed using MDmesh M2 technology. It features a 650 V drain-source voltage (Vds) and a continuous drain current (Id) of 4.5 A at case temperature. The device offers a typical on-resistance (Rds(on)) of 0.85 Ohms and a gate charge (Qg) of 10.3 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation of 48 W. The component is housed in a compact PowerFLAT 5x6 HV surface-mount package.
Single FETs, MOSFETs Feature Summary
- MDmesh M2 technology provides low on-resistance and optimized switching characteristics through strip layout and improved vertical structure.
- Extremely low gate charge and excellent output capacitance profile enhance efficiency in high-frequency applications.
- Integrated Zener protection between gate and source ensures robustness against electrostatic discharge events.
- 100% avalanche tested capability supports operation in inductive load switching scenarios.
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Switching mode power supplies (SMPS)
- Solar microinverters
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant, as MDmesh M2 devices are available in multiple form factors including TO-LL and PowerFLAT. Confirm that the required current rating aligns with the 4.5 A specification at the intended case temperature. Ensure thermal management design accounts for the 48 W power dissipation limit under operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a balance of low conduction loss and fast switching speed is required in space-constrained designs. The PowerFLAT 5x6 HV package offers superior thermal performance compared to traditional leaded packages. Consider the 650 V rating for primary-side or high-voltage secondary applications where standard 600 V parts may lack sufficient margin.
Single FETs, MOSFETs Part Context
This part belongs to STMicroelectronics' MDmesh M2 family of high-voltage power MOSFETs. The series utilizes advanced silicon processing to achieve lower Rds(on) for a given die size compared to previous generations. The STL prefix indicates the PowerFLAT 5x6 HV package, distinguishing it from the STD (DPAK) or STP (TO-220) variants within the same electrical family.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other MDmesh M2 devices with similar voltage and current ratings, such as STL10N65M2 or STL11N65M2, provided the package footprint matches. Verify pinout compatibility and thermal resistance values before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
