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The STP12IE90F4 is an ESBT® (Emitter Switched Bipolar Transistor) manufactured in Monolithic ESBT Technology, designed for high frequency and high voltage applications. It features a Cascode configuration with a collector-source voltage of 900 V, collector current of 12 A, and typical on-resistance of 0.083 Ω. The device supports switching up to 150 kHz with very low turn-off crossover time and squared RBSOA up to 900V. Packaged in TO220FP-4L, it is intended for gate-driven topologies.
Verify the component against the official STMicroelectronics datasheet Rev 2 dated January 2007. Confirm the part marking P12IE90F4 and package type TO220FP-4L. Note that this product is listed as obsolete; ensure compatibility with existing designs or identify suitable replacements before procurement.
Select this component for gate-driven topologies requiring high frequency operation at high voltages. Consider its low equivalent on resistance and fast switching characteristics when designing flyback or forward converters. Ensure thermal management aligns with the specified junction-to-case thermal resistance of 6 °C/W.
The STP12IE90F4 belongs to the ESBT® family, utilizing Monolithic ESBT Technology. This technology aims to provide optimal performance in high-frequency and high-voltage environments. It serves as a specialized power switch alternative to traditional MOSFETs or IGBTs in specific converter architectures.
As the STP12IE90F4 is marked as obsolete, verify availability of direct substitutes. Consult STMicroelectronics documentation for updated ESBT series components that maintain similar voltage, current, and switching specifications for legacy system maintenance.