STPSC10065D

Single Diodes Overview

The STPSC10065DY is a silicon carbide (SiC) power Schottky diode manufactured by STMicroelectronics. It features a 650 V repetitive reverse voltage rating and a 10 A forward current capability. The device utilizes a TO-220AC-2 through-hole package configuration. Key electrical parameters include a maximum forward voltage of 1.3 V at rated current, a peak forward surge current of 48 A, and a low reverse leakage current of 7 uA. It operates within a junction temperature range of -40 °C to +175 °C and holds AEC-Q101 automotive qualification.

Single Diodes Feature Summary

• Schottky construction eliminates reverse recovery charge and minimizes switching ringing
• Switching behavior remains stable and independent of temperature variations
• High forward surge current capability ensures robustness during transient phases
• Compliant with ECOPACK2 environmental standards

Single Diodes Applications

• Power Factor Correction (PFC) circuits
• DC/DC converter topologies
• EV charging station infrastructure
• Hard switching applications requiring high efficiency

Single Diodes Procurement Notes

Verify the specific suffix 'DY' against official documentation to confirm the TO-220AC-2 package and lead-free status. Confirm AEC-Q101 qualification requirements for your target application. Check current lifecycle status as older variants may be obsolete or subject to change. Ensure thermal management design accounts for the specified operating temperature range.

Single Diodes Selection Notes

Select this component when designing systems requiring high-temperature operation up to 175 °C and minimal reverse recovery losses. The TO-220AC-2 package suits applications needing through-hole mounting and robust mechanical stability. Consider the 650 V rating for standard bus voltages in PFC and DC/DC stages. Evaluate thermal resistance requirements based on the 10 A continuous current specification.

Single Diodes Part Context

This part belongs to the STPSC series of silicon carbide power Schottky diodes from STMicroelectronics. The series leverages wide bandgap SiC material to achieve superior performance compared to traditional silicon diodes. These components are engineered for high-efficiency power conversion, offering reduced switching losses and improved thermal handling capabilities in demanding electronic environments.

Single Diodes Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing PCB footprints and thermal designs if considering alternative manufacturers. Cross-reference electrical ratings such as Vrrm, If, and package dimensions carefully before substitution.