STT5000N18P110XPSA1

STT5000N18P110XPSA1

$1,742.58
  • Description:THYRISTOR/THYRISTORMODULES 110 M
  • Series:-

SKU:5cb72e538761 Category: Brand:

  
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Product Detailed Parameters

  • Description:THYRISTOR/THYRISTORMODULES 110 M
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Structure:1-Phase Controller - All SCRs
  • Number of SCRs, Diodes:2 SCRs
  • Voltage - Off State:1.8 kV
  • Current - On State (It (AV)) (Max):-
  • Current - On State (It (RMS)) (Max):4780 A
  • Current - Non Rep. Surge 50, 60Hz (Itsm):44000A @ 50Hz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Voltage - Gate Trigger (Vgt) (Max):2 V
  • Current - Gate Trigger (Igt) (Max):250 mA
  • Current - Hold (Ih) (Max):300 mA
  • Grade:-
  • Qualification:-

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STT5000N18P110XPSA1

Overview

The Infineon STT5000N18P110XPSA1 is a silicon thyristor soft starter module designed for high-power industrial applications. It features a rated repetitive peak forward and reverse off-state voltage (VDRM/VRRM) of 1800 V. The device supports a W1C start current (IRMS st) of 4780 A over a 21-second duration. Maximum surge current (ITSM) ratings are 44,000 A at 25°C and 38,000 A at maximum junction temperature. The on-state voltage (vT) reaches a maximum of 1.43 V at 5000 A. Thermal resistance from junction to ambient (RthJA) is 0.031 K/W per arm under DC conditions.

Feature Summary

  • Pressure contact technology ensures high reliability and robust mechanical connections.
  • Integrated optimized heatsink design facilitates efficient thermal management.
  • Silicon pellet construction provides durable performance in demanding environments.

Applications

  • Soft starters
  • Bypass switches
  • Power controllers
  • Static switches

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact configuration details. Confirm compliance with relevant environmental directives such as RoHS before finalizing procurement. Ensure that the technical specifications align precisely with the intended application requirements to avoid operational mismatches.

Selection Notes

Evaluate the thermal resistance parameters relative to the expected cooling conditions. Consider the critical rate of rise of on-state current limits when designing gate drive circuits. Assess the holding current requirements to ensure stable operation under varying load conditions.

Part Context

This component belongs to the STT series of thyristor modules manufactured by Infineon Technologies. These modules are engineered specifically for heavy-duty power control applications requiring high voltage and current handling capabilities.

Replacement Considerations

Consult official replacement guides or datasheets for compatible alternatives within the same product family. Verify electrical and mechanical compatibility before substituting components.

FAQ

What is the maximum non-repetitive peak forward off-state voltage?

The maximum non-repetitive peak forward off-state voltage (VDSM) is 1850 V at a junction temperature range of +25°C to Tvj max.

What is the critical rate of rise of on-state current?

The critical rate of rise of on-state current ((diT/dt)cr) is specified as 200 A/µs according to DIN IEC 747-6 standards.

What is the maximum junction temperature after start?

The maximum junction temperature after start (Tvj max st) is 140 °C, provided that vR/vD is less than 80% of VRRM/VDRM.

STT5000N18P110XPSA1STT5000N18P110XPSA1
$1,742.58
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