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STW30NM60N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 25A TO247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STW30NM60N
- Description：MOSFET N-CH 600V 25A TO247-3
- Series：MDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：190W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for STW30NM60N
Single FETs, MOSFETs Overview
The STW30NM60N is an N-channel Power MOSFET from the MDmesh series by STMicroelectronics, housed in a TO-247 package. It features a 600 V drain-source voltage rating and a continuous drain current of 30 A. The device exhibits a maximum on-resistance of 125 mΩ at 10 V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Utilizes MDmesh technology for low on-resistance and gate charge
- 100% avalanche tested for robustness
- Low input capacitance and gate charge for efficient switching
Single FETs, MOSFETs Applications
- High efficiency power converters
- Switching applications requiring high voltage tolerance
- General purpose power switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix (e.g., D) against the datasheet to confirm diode inclusion and exact electrical tolerances. Ensure the TO-247 package variant matches the thermal management requirements of the target design. Confirm RoHS compliance status through official manufacturer documentation prior to integration.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a balance of high voltage blocking capability and moderate current handling in a through-hole package. The MDmesh technology offers improved efficiency compared to standard planar structures. Evaluate thermal dissipation needs given the 125 mΩ on-resistance at the expected operating current levels.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh family of N-channel MOSFETs designed for high-efficiency power conversion. It shares the core technology with variants like STW18NM60N but differs in current handling and on-resistance specifications. The TO-247 package provides a standardized mounting solution for medium-power applications.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes such as STW18NM60N if lower current is acceptable. Verify pinout compatibility and thermal resistance values when considering alternative packages or manufacturers.
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