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SUP40N10-30-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 38.5A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SUP40N10-30-GE3
- Description：MOSFET N-CH 100V 38.5A TO220AB
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：38.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for SUP40N10-30-GE3
Single FETs, MOSFETs Overview
The SUP40N10-30-GE3 is a single-channel N-Channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a D2PAK (TO-263) surface-mount package. The device features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 40 A. Key electrical characteristics include a maximum on-resistance of 30 mΩ at a gate-source voltage of 10 V, with a gate threshold voltage ranging from 2 V to 4 V. The component is rated for power dissipation up to 150 W and operates within a temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Employs TrenchFET planar technology to achieve low specific on-resistance and optimized switching performance.
- Designed for high reliability with lead-free plating and halogen-free compounds compliant with RoHS directives.
- Features ruggedized construction capable of withstanding high energy pulses in avalanche mode.
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control applications
- Load switch implementations
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffixes such as -GE3 to ensure compliance with specific environmental standards like RoHS and REACH. Confirm the package type matches the intended PCB footprint, typically D2PAK or TO-263 variants. Check manufacturer documentation for any recent product change notices regarding material composition or manufacturing site migration that may affect qualification.
Single FETs, MOSFETs Selection Notes
Select this component when a robust N-Channel solution is required for medium-power switching applications. The 100 V rating provides sufficient headroom for 48 V systems. Evaluate thermal management requirements based on the 150 W dissipation rating and the specific ambient conditions. Ensure gate drive voltages align with the specified thresholds for optimal conduction losses.
Single FETs, MOSFETs Part Context
This device belongs to the SUP series of power MOSFETs from Vishay Siliconix. The series is characterized by advanced trench gate technology designed for efficiency in power conversion. The SUP40N10 variant specifically targets applications requiring a balance between current handling capability and low on-state resistance in standard surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay cross-reference guides for verified substitutes. Potential alternatives may include other N-Channel MOSFETs with similar 100 V ratings and comparable Rds(on) values in TO-263 packages. Verify pinout compatibility and thermal resistance parameters before substitution.
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