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SVT10120VB_R2_00001 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is DIODE SCHOTTKY 120V 10A TO277B. Review the specifications below when checking this part for your BOM.
The SVT10120VB is an ultra-low forward voltage Schottky barrier rectifier manufactured by Panjit International Inc. It features a maximum repetitive peak reverse voltage of 120 V and a maximum average forward rectified current of 10 A. The device utilizes a TO-277B case with solder-plated terminals. Typical thermal resistance values are 110 °C/W junction-to-ambient and 3 °C/W junction-to-case. Operating junction temperature ranges from -55 to +150 °C, while storage temperature spans the same range.
Verify the specific ordering suffix against official documentation to ensure correct packaging configuration. Confirm compliance requirements such as RoHS and halogen-free status match project specifications. Check for any recent product change notifications or revisions that may affect mechanical dimensions or electrical characteristics before finalizing procurement orders.
Select this component when low forward voltage drop and high efficiency are critical for system performance. The TO-277B package offers a compact form factor ideal for automated pick-and-place manufacturing processes. Ensure thermal management strategies account for the specified thermal resistance values under expected operating conditions.
This part belongs to the SVT series of Schottky barrier rectifiers produced by Panjit International Inc. The series focuses on providing ultra-low forward voltage characteristics within standard surface-mount packages. The TO-277B casing provides a standardized footprint compatible with existing PCB layouts designed for similar diode families.
Consult official datasheets for alternative parts offering matching 120 V reverse voltage and 10 A current ratings in TO-277B packages. Verify equivalent thermal resistance and forward voltage drop specifications to maintain circuit performance integrity during substitution.
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