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T1220N28TOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 2800V 2625A DO200AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：2.8 kV
- Current - On State (It (AV)) (Max)：1220 A
- Current - On State (It (RMS)) (Max)：2625 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：25000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Clamp On
- Package / Case：TO-200AC
- Voltage - Gate Trigger (Vgt) (Max)：2 V
- Current - Gate Trigger (Igt) (Max)：250 mA
- Current - Hold (Ih) (Max)：500 mA
- Grade：-
- Qualification：-
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Overview
The T1220N28TOFVTXPSA1 is an Electrical Triggered Phase Control Thyristor manufactured by Infineon Technologies. It features a rated repetitive peak reverse voltage (VRRM) and direct current blocking voltage (VDRM) of 2800 V. The average on-state current (ITAVM) is 1220 A at 180° electrical conduction angle, with a maximum junction temperature (Tvj max) of 125°C. Key electrical parameters include a maximum on-state voltage drop (VT0) of 1 V, a gate trigger voltage (VT) of 1.38 V at 1 kA, and a maximum junction-to-case thermal resistance (RthJC) of 18.4 K/kW. The device supports a non-repetitive surge current (ITSM) of 22,500 A for 10 ms and has an I²t rating of 2531 x 10³ A²s. It utilizes a disc package with a diameter of 75 mm and height of 26 mm.
Feature Summary
- Electrical triggering mechanism designed for high-power phase control applications.
Applications
- High power industrial rectifier systems
- HVDC transmission converter valves
- Large motor drive applications
Procurement Notes
Verify the specific suffix VT against official Infineon documentation to confirm electrical triggering compatibility. Confirm RoHS compliance status through the manufacturer's latest environmental certificates. Ensure clamp force requirements between 20 kN and 45 kN are met during assembly. Check for EOL notifications as some variants in this series may have discontinuation notices. Validate package dimensions against mechanical constraints before integration.
Selection Notes
Select this component for applications requiring 2800 V blocking capability and 1220 A continuous current handling. Ensure the cooling system can maintain junction temperatures below 125°C given the RthJC of 18.4 K/kW. Verify that the gate drive circuitry provides sufficient trigger energy for electrical triggering. Consider the 75 mm disc form factor for mechanical mounting and heat sink interface design.
Part Context
This part belongs to Infineon's T1220N series of high-power thyristors. The TOF designation indicates a specific disc package configuration. The XPSA1 suffix typically denotes packaging or testing variations within the Infineon portfolio. This series is engineered for robust performance in demanding power electronics environments.
Replacement Considerations
Direct substitutes include T1220N28TOF and T1220N28TOFXPSA1. Verify electrical equivalence and package compatibility before substitution. Cross-reference with T1220N24TOFVT for lower voltage options if applicable.
