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T12M25F600B
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Product Detailed Parameters
- Description：THYRISTOR TO220AB TUBE 50PCS
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- Voltage - Off State：-
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：-
- Current - Hold (Ih) (Max)：-
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- SCR Type：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：-
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Overview
The T12M25F600B is a silicon bidirectional thyristor (triac) manufactured by Diodes Incorporated, housed in a TO-220AB thermowatt package. It supports an RMS on-state current of 12 A at a case temperature of +80 °C and offers a peak repetitive off-state voltage of 600 V. The device features glass-passivated junctions for stability and guarantees gate triggering across all four quadrants. Key electrical parameters include a peak non-repetitive surge current of 100 A, a thermal resistance from junction to case of 2.2 °C/W, and a holding current maximum of 30 mA.
Feature Summary
- Glass passivated junctions ensure parameter uniformity and operational stability
- Thermowatt construction provides low thermal resistance and high heat dissipation
- Gate triggering is guaranteed in all four operating quadrants
Applications
- Solid state relays
- Motor speed control circuits
- Lighting dimmer applications
Procurement Notes
Verify the component manufacturer against the datasheet source, as the document indicates Lite-On Semiconductor while the prompt specifies Diodes Incorporated. Confirm the package type matches the required PCB footprint and that the voltage rating aligns with the circuit's peak blocking requirements. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance.
Selection Notes
Select this component when a robust triac with a 600 V blocking capability and 12 A continuous current handling is required. The TO-220AB package facilitates effective heat sinking for high-power switching tasks. Verify that the application environment remains within the -40 °C to +125 °C operating junction temperature range to maintain reliable performance.
Part Context
This part belongs to the family of 12 Ampere, 600 Volt silicon bidirectional thyristors designed for general-purpose AC power control. The specific model utilizes a ruggedized plastic case to withstand mechanical stress and thermal cycling during operation.
Replacement Considerations
Consult official distributor databases for verified substitute part numbers with matching electrical ratings and pin configurations before implementation.
FAQ
What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 2.2 °C/W.
How many operating quadrants are supported for gate triggering?
Gate triggering is guaranteed in all four quadrants.
What is the maximum holding current?
The maximum holding current is 30 mA.
