T12M35T800UB

Triacs Overview

The T12M35T800UB is a silicon bidirectional thyristor (triac) from Diodes Incorporated, housed in a TO-220AB package. It supports an RMS on-state current of 12 A and a repetitive peak off-state voltage of 800 V. The device operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a maximum on-state voltage of 1.6 V at 12 A, a gate trigger current of 35 mA, and a holding current of 50 mA. It features a non-repetitive surge peak on-state current of 90 A and a thermal resistance junction-to-case of 1.8 °C/W.

Triacs Feature Summary

• Glass passivated for enhanced voltage ruggedness and reliability
• Capable of triggering in three quadrants only
• Lead-free finish with RoHS compliance

Triacs Applications

• General-purpose motor controls
• Power control tools and electric drills
• Home applications including fan controls and light dimmers

Triacs Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantities and carrier types. Ensure that the selected component meets all applicable regulatory standards required for your specific deployment environment before finalizing procurement.

Triacs Selection Notes

Select this component based on its 800 V blocking capability and 12 A continuous current rating. Consider the 35 mA gate trigger requirement when designing the drive circuitry. Verify that the thermal management solution can handle the specified power dissipation at the intended operating junction temperature.

Triacs Part Context

This part belongs to the T12MxxT800UB series of silicon bidirectional thyristors manufactured by Diodes Incorporated. The series includes variants with different gate trigger sensitivities, such as the T12M10T800UB, which shares identical main terminal ratings but differs in gate characteristics.

Triacs Replacement Considerations

The T12M10T800UB is a direct alternative within the same series, sharing the same package and main electrical ratings. Other triacs with matching 800 V and 12 A specifications may be considered if gate trigger requirements align with the application design.

Triacs FAQ

What is the maximum rate of rise of off-state voltage for the T12M35T800UB?

The maximum rate of rise of off-state voltage (dV/dt) is 2000 V/µs at a junction temperature of +125°C.

Does the T12M35T800UB support triggering in all four quadrants?

No, the datasheet specifies that the device is designed for triggering in three quadrants only.

What is the thermal resistance from junction to case?

The thermal resistance junction-to-case (RθJC) is typically 1.8 °C/W.