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T1551N52TOHXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 5200V 2780A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：5.2 kV
- Current - On State (It (AV)) (Max)：2470 A
- Current - On State (It (RMS)) (Max)：2780 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：44000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：TO-200AF
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：350 mA
- Current - Hold (Ih) (Max)：350 mA
- Grade：-
- Qualification：-
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Overview
The T1551N52TOHXPSA1 is an Electrical Triggered Phase Control Thyristor manufactured by Infineon Technologies. It features a rated repetitive off-state voltage (VDRM/VRRM) of 5200 V and a maximum on-state current (ITAVM) of 1770 A at 180° electrical conduction. The device supports a non-repetitive surge current (ITSM) of 43000 A over 10 ms with a maximum junction temperature of 125°C. Key electrical parameters include a maximum on-state voltage drop (VT0) of 0.92 V, a gate trigger voltage (VGT) of 2.5 V, and a gate trigger current (IGT) of 350 mA. The component utilizes a ceramic disc package with a diameter of 120 mm and height of 26 mm, designed for press-fit mounting.
Feature Summary
- Electrical triggering mechanism for phase control applications
- High surge current capability up to 43000 A
- Robust thermal performance with low junction-to-case thermal resistance
Applications
- High-power industrial phase control systems
- HVDC transmission converter valves
- Large motor drive rectifiers
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm pinout and mechanical tolerances. Ensure that the specified clamp force range of 36 to 52 kN is achievable within the target assembly design. Confirm RoHS compliance status through the latest product qualification reports before integration into regulated environments.
Selection Notes
Select this thyristor based on the required 5200 V blocking voltage and 1770 A average current ratings. Evaluate the thermal management requirements considering the maximum junction temperature limit of 125°C and the specific thermal resistance characteristics. Verify that the gate drive circuit can supply the necessary 350 mA trigger current reliably under all operating conditions.
Part Context
This component belongs to Infineon's high-power bipolar semiconductor portfolio, specifically designed for demanding power electronics applications. It represents a specialized solution for handling extreme voltages and currents in industrial settings where reliability and surge capacity are critical operational requirements.
Replacement Considerations
The T1551N52TOH is listed as a related part number. Verify if the base model offers identical electrical specifications and mechanical dimensions before substitution. Cross-reference datasheets to ensure compatibility with existing cooling and clamping mechanisms.
