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T160N18BOFXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 1900V 300A NONSTAND
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：1.9 kV
- Current - On State (It (AV)) (Max)：160 A
- Current - On State (It (RMS)) (Max)：300 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：3600A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Screw Mount
- Package / Case：Nonstandard
- Voltage - Gate Trigger (Vgt) (Max)：1.4 V
- Current - Gate Trigger (Igt) (Max)：150 mA
- Current - Hold (Ih) (Max)：200 mA
- Grade：-
- Qualification：-
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Overview
The Infineon T160N18BOFXPSA1 is a silicon thyristor designed for high-power phase control applications. It features a maximum repetitive peak forward and reverse voltage of 1800 V, an RMS on-state current limit of 300 A, and an average on-state current rating of 160 A at a case temperature of 85°C. The device supports a surge current capacity of up to 3800 A and includes integrated gate leads with specified cable configurations.
Feature Summary
- Utilizes pressure contact technology for the silicon pellet assembly
- Includes integrated gate leads with specific E-Cu-rope and silicontube configurations
- Features a screw-mount design with defined tightening torque specifications
Applications
- High-power phase control circuits
- Industrial power conversion systems
- Motor drive applications
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm the specific gate lead configuration and packaging details. Ensure that the procurement channel provides valid traceability for this component type. Cross-reference the datasheet revision date to ensure compatibility with your system requirements before finalizing orders.
Selection Notes
Select this component based on its 1800 V blocking capability and 160 A average current rating at 85°C case temperature. Evaluate thermal management needs using the provided junction-to-case thermal resistance data. Confirm that the application's di/dt and dv/dt requirements fall within the specified critical limits of 150 A/µs and 1000 V/µs respectively.
Part Context
This part belongs to the T160N series of high-power thyristors manufactured by Infineon Technologies (formerly EUPEC). These devices are engineered for robust performance in demanding industrial environments, utilizing standard pressure contact mounting techniques suitable for large-scale power electronics assemblies.
Replacement Considerations
Consult official Infineon replacement guides for verified substitutes. Ensure any alternative maintains equivalent voltage ratings, current capacities, and mechanical mounting dimensions.
