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The T16M10T800UB is a silicon bidirectional thyristor (Triac) manufactured by Diodes Incorporated. It features an 800 V repetitive peak off-state voltage and a 16 A RMS on-state current rating at +125°C junction temperature. The device supports a non-repetitive surge peak on-state current of 130 A and has a maximum gate trigger current of 10 mA. It operates within a storage and junction temperature range of -40°C to +125°C. The component utilizes a TO220AB package with matte tin plated leads, providing a thermal resistance from junction to case of 1.4°C/W.
Verify the specific part number against official Diodes Incorporated documentation to confirm electrical parameters and mechanical specifications. Ensure that the procurement channel is authorized to guarantee product authenticity and compliance with standard terms and conditions. Review the datasheet for proper handling and mounting requirements before integration into designs.
Select this component based on its 800V blocking capability and 16A continuous current rating suitable for moderate power applications. Consider the three-quadrant triggering characteristic when designing gate drive circuits. Evaluate the thermal management strategy using the specified thermal resistance values to maintain junction temperatures within the operational limits during high-current surges.
This Triac belongs to the T16MxxT800UB series, which shares identical voltage and current ratings but varies in gate sensitivity. The T16M10T800UB specifically denotes a low gate trigger current variant compared to the T16M35T800UB. Both share the same TO220AB physical package and general electrical characteristics defined in document DS45511.
The T16M35T800UB is a documented alternative within the same series offering higher gate sensitivity. Verify compatibility regarding gate trigger current requirements and ensure the replacement maintains the necessary thermal and voltage ratings for the specific application environment.