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The T16M10T800UD is a silicon bidirectional thyristor (TRIAC) manufactured by Diodes Incorporated, housed in a TO220AB package. It supports an RMS on-state current of 16 A and a repetitive peak off-state voltage of 800 V. The device operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a maximum on-state voltage of 1.6 V at 16 A, a gate trigger current of 10 mA for quadrant 1 triggering, and a holding current of 15 mA. It features glass passivation for ruggedness and complies with RoHS standards.
Verify the specific ordering suffix 'UD' against the manufacturer's official documentation to confirm the tube packing quantity and carrier type. Ensure that the selected component meets all applicable environmental directives, such as RoHS compliance and halogen-free requirements, before finalizing procurement specifications.
Select this component when an 800 V rating and 16 A continuous current capacity are required for AC power switching. Consider the 10 mA gate trigger current for driver compatibility. Evaluate thermal resistance values relative to the expected heat sink configuration to maintain junction temperatures within the specified operational limits during continuous use.
This part belongs to the T16MxxT800UD series of TRIACs from Diodes Incorporated. It shares the same physical package and basic voltage/current ratings with the T16M35T800UD variant, differing primarily in gate sensitivity specifications. Both variants utilize the TO220AB housing for through-hole mounting.
The T16M35T800UD is a documented alternative within the same product family. Verify if the higher gate trigger current of the alternative variant aligns with the existing circuit design constraints before substitution.
The maximum non-repetitive surge peak on-state current is 130 A for both 50 Hz and 60 Hz full cycle conditions.
No, the datasheet specifies that the device is capable of triggering in three quadrants only.
The typical thermal resistance from junction to case is 1.9 °C/W.