T1930N32TOFVTXPSA1

Overview

The T1930N32TOFVTXPSA1 is a high-power Silicon Controlled Rectifier (SCR) manufactured by Infineon Technologies. It belongs to the TOF VT series, designed for Electrical Triggered Phase Control applications. The device features a disc package with a diameter of 75mm and a height of 26mm, utilizing ceramic insulation. Key electrical parameters include a repetitive peak off-state voltage (VDRM/VRRM) of 3200V and an on-state current (ITAVM) of 930A at 180° electrical degrees. The maximum junction temperature (Tvj) is rated at 125°C, with a gate trigger time (tq) of 500µs.

Feature Summary

• Electrical triggering mechanism for phase control applications
• Disc package design with ceramic insulation for thermal management
• High voltage blocking capability suitable for industrial power conversion

Applications

• Industrial motor drives
• HVDC transmission systems
• Static VAR compensators

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Request original datasheets and test reports to confirm electrical specifications match the T1930N32TOFVTXPSA1 designation. Inspect packaging integrity upon receipt to prevent damage to the ceramic substrate and semiconductor die during handling and installation.

Selection Notes

Select this component based on its 3200V voltage rating and 930A current capacity requirements. Ensure the application circuit supports the 500µs gate trigger time and operates within the 125°C maximum junction temperature limit. Verify that the mechanical clamp force specifications align with the assembly instructions for the 75mm disc package to ensure reliable thermal contact.

Part Context

This part is part of Infineon's TOF VT family of electrically triggered thyristors. It shares similar physical dimensions and mounting characteristics with other models in the series, such as the T1930N36TOF VT, but differs in specific voltage and current ratings. The TOF VT series is engineered for robust performance in high-power industrial environments requiring precise phase control.

Replacement Considerations

Direct replacement requires verifying identical voltage, current, and thermal parameters. Cross-reference with Infineon's official substitution guides for equivalent TOF VT series devices. Ensure any substitute maintains compatibility with the existing gate drive circuitry and mechanical clamping constraints.