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T1960N18TOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 2200V 4100A DO200AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：2.2 kV
- Current - On State (It (AV)) (Max)：1960 A
- Current - On State (It (RMS)) (Max)：4100 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：40000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：TO-200AD
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：300 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The T1960N18TOFVTXPSA1 is an electrical triggered phase control thyristor manufactured by Infineon Technologies. It features a disc package with a diameter of 100 mm and a height of 26 mm, mounted on a ceramic substrate. The device supports a maximum repetitive peak reverse voltage (VRRM) and blocking voltage (VDRM) of 1800 V. The average on-state current (ITAVM) is rated at 1960 A under 180° electrical sine wave conditions. Key electrical parameters include a maximum on-state resistance (rT) of 0.15 mΩ and a gate trigger time (tq) of 300 µs. The component operates with a maximum junction temperature (Tvj) of 125 °C.
Feature Summary
- High power handling capability with 1960 A average on-state current rating for heavy-duty industrial applications.
- Robust surge withstand capacity characterized by a high non-repetitive peak on-state current (ITSM) rating.
- Designed for reliable phase control operations utilizing electrical triggering mechanisms.
Applications
- Industrial motor drives requiring high current phase control
- Resistive load control systems in manufacturing environments
- High-power heating element regulation
Procurement Notes
Verify the complete part number including the suffix to ensure correct configuration. Confirm mechanical dimensions and clamp force requirements match the application design. Check official documentation for specific thermal management guidelines and mounting instructions to ensure proper integration and long-term reliability.
Selection Notes
Select this component based on the required voltage blocking level of 1800 V and the necessary current carrying capacity of 1960 A. Ensure the cooling system can maintain the junction temperature within the specified maximum limit. Verify that the gate drive circuitry provides sufficient energy to trigger the device reliably within the specified time constraints.
Part Context
This thyristor belongs to Infineon's high-power bipolar semiconductor portfolio, specifically designed for demanding power electronics applications. It represents a standard disc-type configuration widely used in industrial power conversion. The product line emphasizes robustness and efficiency in high-current switching scenarios.
Replacement Considerations
Consult official Infineon substitution guides for compatible alternatives. Verify that any replacement matches the critical electrical ratings and physical dimensions. Cross-reference technical specifications to ensure functional equivalence in the target circuit design.
