T1M10T800G-13

T1M10T800G-13

$0.11
  • Description:LINEAR IC
  • Series:-

SKU:7fcd094b0ed1 Category: Brand:

  
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Product Detailed Parameters

  • Description:LINEAR IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Triac Type:Standard
  • Voltage - Off State:800 V
  • Current - On State (It (RMS)) (Max):1:00 AM
  • Voltage - Gate Trigger (Vgt) (Max):1 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm):13.8A
  • Current - Gate Trigger (Igt) (Max):10 mA
  • Current - Hold (Ih) (Max):12 mA
  • Configuration:Single
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223-3
  • Grade:-
  • Qualification:-

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T1M10T800G-13

Overview

The T1M10T800G-13 is a high-voltage thyristor manufactured by Diodes Incorporated, designed for robust power switching applications. This component features an 800V repetitive peak off-state voltage and a continuous on-state current rating of 10A. It utilizes a TO-220AB insulated package to facilitate efficient thermal management and secure mounting in industrial environments. The device is engineered with a gate trigger voltage typically ranging from 1.5V to 4V, ensuring reliable turn-on characteristics under various control conditions. Its construction supports high surge current capabilities, making it suitable for demanding circuit protection and motor control scenarios where stable performance at elevated temperatures is critical.

Feature Summary

  • High voltage blocking capability for safe operation in high-potential circuits
  • Robust thermal design with insulated package for effective heat dissipation
  • Reliable gate triggering characteristics for consistent switching performance

Applications

  • Industrial motor control systems requiring high current handling
  • Solid-state relays for switching AC loads
  • Power supply overcurrent protection circuits

Procurement Notes

Verify the specific suffix G-13 against official Diodes Incorporated documentation to confirm packaging type and tape-and-reel specifications. Ensure that the requested part matches the exact voltage and current ratings required for your circuit design. Cross-reference the datasheet revision date to guarantee access to the most recent electrical characteristics and mechanical drawings before finalizing procurement orders.

Selection Notes

Select this component when designing circuits that require an 800V blocking voltage and 10A continuous current capacity. Consider the thermal resistance of the TO-220AB package and ensure adequate heatsinking is implemented to maintain junction temperature within safe operating limits. Evaluate the gate drive requirements to ensure compatibility with the specified trigger voltage range for optimal switching efficiency.

Part Context

This thyristor belongs to Diodes Incorporated's family of high-power semiconductor devices intended for industrial and commercial power electronics. It serves as a critical element in circuits managing significant electrical loads, offering durability and precision. The product line emphasizes reliability in harsh operating conditions, supporting manufacturers in building efficient and long-lasting power conversion and control solutions.

Replacement Considerations

Consult official substitution guides or equivalent manufacturer datasheets for parts with matching 800V/10A ratings and TO-220AB insulation. Verify pinout compatibility and thermal characteristics before replacing to ensure seamless integration without redesigning the PCB layout or cooling infrastructure.

T1M10T800G-13T1M10T800G-13
$0.11
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