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T2001N36TOFXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 3600V 29900A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：3.6 kV
- Current - On State (It (AV)) (Max)：1900 A
- Current - On State (It (RMS)) (Max)：29900 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：44000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：TO-200AF
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：350 mA
- Current - Hold (Ih) (Max)：350 mA
- Grade：-
- Qualification：-
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Overview
The Infineon T2001N36TOFXPSA1 is a single-element silicon phase control thyristor module designed for high-power industrial applications. It features a ceramic disc housing with a diameter of 120mm and height of 26mm, utilizing the TO-200AF package configuration. The device provides a rated repetitive off-state voltage (VDRM) of 3600V and supports a non-repetitive on-state peak current of 29900A. Electrical triggering ensures precise phase control functionality within the specified operating parameters.
Feature Summary
- Electrical triggered phase control capability for precise power regulation
- Robust ceramic disc housing construction ensuring mechanical stability
- High surge current handling capacity for demanding switching environments
Applications
- Industrial motor drive systems requiring high current switching
- Resistive heating control applications in manufacturing processes
- Power supply units needing high-voltage phase control
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number T2001N36TOFXPSA1 with official Infineon documentation. Confirm that the received unit matches the specified TO-200AF package dimensions and ceramic housing type. Ensure storage conditions comply with semiconductor handling standards to prevent moisture ingress or physical damage prior to installation. Check for any specific handling instructions regarding clamping force requirements during mounting procedures.
Selection Notes
Select this component when designing circuits requiring a single-phase controlled thyristor with a 3600V blocking capability and significant surge current tolerance. The TO-200AF form factor is suitable for applications where standard disc mounting methods are preferred over modular PCB solutions. Consider thermal management requirements associated with high-current operation and ensure gate drive circuits align with the electrical triggering specifications provided in the datasheet.
Part Context
This part belongs to Infineon's range of silicon phase control thyristors, specifically engineered for robust industrial performance. The T-series designation typically indicates high-power discrete components housed in durable ceramic packages. These devices are integral to heavy-duty power electronics, offering reliability in environments subject to high electrical stress and thermal cycling compared to lower-rated alternatives.
Replacement Considerations
Direct substitutes must match the 3600V VDRM rating and comparable current capabilities. Verify pinout compatibility and mechanical dimensions against existing board layouts. Consult official replacement guides for equivalent series parts from Infineon or other manufacturers providing identical electrical characteristics and package styles.
