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T2160N22TOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 2800V 4600A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：2.8 kV
- Current - On State (It (AV)) (Max)：2400 A
- Current - On State (It (RMS)) (Max)：4600 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：44000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：DO-200AE
- Voltage - Gate Trigger (Vgt) (Max)：3 V
- Current - Gate Trigger (Igt) (Max)：300 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The T2160N22TOFVTXPSA1 is a high-power Silicon Controlled Rectifier (SCR) manufactured by Infineon Technologies. It belongs to the T2160N series of Electrical Triggered Phase Control Thyristors. The device features a disc package configuration with a diameter of 111mm and a height of 26mm, utilizing ceramic insulation. Key electrical parameters include a maximum repetitive peak off-state voltage (VDRM/VRRM) of 2200V and a maximum on-state current (ITAVM) of 2400A at an ambient temperature of 180°C. The component supports a non-repetitive surge current (ITSM) of 40000A for a 10ms duration at maximum junction temperature. It exhibits a maximum on-state voltage drop (VT/IT) of 2.65V at 8.8kA and a maximum junction temperature (Tvj) rating of 125°C.
Feature Summary
- Electrical triggering mechanism designed for phase control applications
- High surge current capability suitable for demanding power switching environments
- Robust disc package construction with specified clamping force requirements
Applications
- High power thyristor phase control systems
- Industrial power conversion equipment
- HVDC transmission components
Procurement Notes
Verify the specific ordering suffix and full part number against official Infineon documentation before procurement. Confirm availability status as distribution channels may list this item as discontinued or end-of-life. Ensure that the required clamping force range between 42 kN and 95 kN is compatible with the intended mechanical assembly design. Cross-reference the SP000405112 alias to ensure accurate identification during sourcing.
Selection Notes
Select this component based on its 2200V blocking voltage and 2400A continuous current ratings. Evaluate the thermal management requirements given the 125°C maximum junction temperature limit. Consider the physical dimensions of the 111mm disc package and the necessary mechanical clamping infrastructure. Verify compatibility with electrical triggering circuits for phase control operations.
Part Context
This part is a variant within the T2160N family of high-power thyristors from Infineon Technologies. It shares the core T2160N designation but differs in voltage and current specifications compared to other members like the T2160N20 or T2160N26. The TOFVTXPSA1 suffix indicates specific packaging and tape-and-reel or tray handling configurations typical for industrial semiconductor distribution.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official Infineon replacement guides or contact technical support directly for validated alternatives.
