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T2160N24TOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 2800V 4600A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：2.8 kV
- Current - On State (It (AV)) (Max)：2400 A
- Current - On State (It (RMS)) (Max)：4600 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：44000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：DO-200AE
- Voltage - Gate Trigger (Vgt) (Max)：3 V
- Current - Gate Trigger (Igt) (Max)：300 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The T2160N24TOFVTXPSA1 is a high-power Phase Control Thyristor (PCT) manufactured by Infineon Technologies. It features a disc package with a diameter of 111 mm and a height of 26 mm, utilizing ceramic insulation for electrical isolation. The device is rated for a repetitive peak reverse voltage of 2400 V and an average on-state current of 2160 A at 180° electrical degrees. Key electrical characteristics include a maximum non-repetitive surge current of 35,000 A over 10 ms and a junction temperature range up to 125°C. The component is designed for robust performance in demanding industrial power conversion applications.
Feature Summary
- High surge current capability for handling transient loads
- Ceramic insulated construction for reliable electrical isolation
- Designed for phase control applications requiring stable blocking
Applications
- Industrial motor drives
- HVDC transmission systems
- High-power rectifier bridges
Procurement Notes
Verify the exact part number suffix against official Infineon documentation to ensure correct configuration. Confirm availability status as high-power thyristors may have limited stock or long lead times. Check for RoHS compliance certificates if required for specific regulatory environments. Ensure proper handling procedures are followed due to the large physical size and weight of the disc package.
Selection Notes
Select this component when high voltage blocking and high current carrying capacity are required in a compact disc form factor. Compare thermal resistance values with existing designs to ensure adequate heatsinking. Verify gate trigger requirements match the driving circuit capabilities. Consider mechanical clamping force specifications during module assembly design.
Part Context
This part belongs to Infineon's T2160N series of high-power thyristors. It shares similar packaging and mounting dimensions with other variants in the T2160N family, such as T2160N20 and T2160N26, differing primarily in voltage ratings. The TOF VT designation indicates specific manufacturing and testing standards for phase control thyristors.
Replacement Considerations
Direct replacements within the same series include T2160N20TOFVTXPSA1 and T2160N26TOFVTXPSA1, provided voltage ratings meet system requirements. Cross-series comparisons with T3160N or T1900N models require careful evaluation of current ratings and thermal characteristics.
