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Product Detailed Parameters
- Description:SCR MODULE 2800V 4600A DO200AE
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:Single
- Number of SCRs, Diodes:1 SCR
- Voltage - Off State:2.8 kV
- Current - On State (It (AV)) (Max):2400 A
- Current - On State (It (RMS)) (Max):4600 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):44000A @ 50Hz
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Chassis Mount
- Package / Case:DO-200AE
- Voltage - Gate Trigger (Vgt) (Max):3 V
- Current - Gate Trigger (Igt) (Max):300 mA
- Current - Hold (Ih) (Max):300 mA
- Grade:-
- Qualification:-
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Overview
The T2160N26TOFVTXPSA1 is an Electric Triggered Phase Control Thyristor (ETPCT) manufactured by Infineon Technologies. It features a disc package with a diameter of 111 mm and height of 26 mm, utilizing ceramic insulation. Key electrical parameters include a maximum repetitive peak reverse voltage (VRRM) of 2600 V and a maximum average on-state current (ITAVM) of 2400 A at 180° electrical conduction. The device supports a non-repetitive surge current (ITSM) of 40000 A for 10 ms and has a maximum junction temperature (Tvj) of 125 °C. Additional specifications include a maximum on-state resistance of 0.154 mΩ, a turn-off time (tq) of 400 µs, and a clamping force range of 42 to 95 kN.
Feature Summary
- Electrically triggered phase control design for high-power applications
- Robust ceramic-insulated disc construction for mechanical stability
- High surge current capability suitable for demanding industrial environments
Applications
- High-power industrial motor drives
- HVDC transmission systems
- Large-scale welding equipment
Procurement Notes
Verify the complete part number including the XPSA1 suffix against official Infineon documentation to ensure correct configuration. Confirm that the required clamping force falls within the specified 42 to 95 kN range for your assembly. Check for any specific handling instructions regarding the ceramic disc structure during installation.
Selection Notes
Select this component when a 2600 V blocking voltage and 2400 A continuous current rating are required. Ensure the application can accommodate the 400 µs turn-off time and 125 °C maximum junction temperature limits. Verify that the trigger circuitry is compatible with electrically triggered thyristor requirements rather than gate-triggered alternatives.
Part Context
This model belongs to the T2160N series of high-power thyristors from Infineon. The series is designed for heavy-duty phase control applications. The TOF designation indicates the specific packaging and terminal configuration, while VT denotes the electrically triggered variant. This places it in the category of ultra-high power semiconductor switches.
Replacement Considerations
Direct replacements must match the 2600 V rating, 2400 A current capacity, and 111 mm disc dimensions. Verify compatibility with existing cooling and clamping mechanisms. Consult Infineon's selection guides for alternative models within the T-series if exact matches are unavailable.
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