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T2160N28TOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 2800V 4600A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：2.8 kV
- Current - On State (It (AV)) (Max)：2400 A
- Current - On State (It (RMS)) (Max)：4600 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：44000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：DO-200AE
- Voltage - Gate Trigger (Vgt) (Max)：3 V
- Current - Gate Trigger (Igt) (Max)：300 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The T2160N28TOFVTXPSA1 is an Electrical Triggered Phase Control Thyristor manufactured by Infineon Technologies. It features a DO-200AE (Disc) package with a ceramic insulator. The device supports a repetitive peak reverse voltage of 2800 V and a maximum average on-state current of 2400 A at 180° electrical sine. Non-repetitive surge current capacity reaches 44,000 A at 50 Hz for 10 ms. Maximum junction temperature is rated at 125°C, with a thermal resistance from junction to case of 8.5 K/kW.
Feature Summary
- Electrical triggering mechanism designed for phase control applications
- Robust ceramic-insulated disc construction for high power density
- High surge current capability suitable for demanding industrial loads
Applications
- Industrial motor drives
- HVDC transmission systems
- Static VAR compensators
Procurement Notes
Verify the exact part number against official Infineon documentation before procurement. Confirm that the suffix VT indicates the specific variant required for your design. Check current availability status as lead times may vary. Ensure compliance with RoHS directives if applicable to your region. Validate packaging specifications with the supplier prior to order placement.
Selection Notes
Select this component based on its 2800 V blocking capability and 2400 A continuous current rating. Evaluate thermal management requirements given the 8.5 K/kW junction-to-case resistance. Ensure gate drive circuits match the electrical triggering specifications. Consider mechanical clamping forces compatible with the DO-200AE package dimensions.
Part Context
This thyristor belongs to Infineon's high-power phase control series. It shares architectural similarities with other T-series devices but offers distinct voltage and current ratings. The DO-200AE package is standard for large-scale industrial power electronics requiring robust mechanical stability and efficient heat dissipation.
Replacement Considerations
Direct substitutes include T2160N20TOFVTXPSA1 for lower voltage applications or T2480N28TOFVT for higher current variants. Verify pinout compatibility and thermal characteristics when cross-referencing with other Infineon disc thyristors.
