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T2180N12TOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 1800V 4460A DO200AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：1.8 kV
- Current - On State (It (AV)) (Max)：2180 A
- Current - On State (It (RMS)) (Max)：4460 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：44000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：DO-200AD
- Voltage - Gate Trigger (Vgt) (Max)：2 V
- Current - Gate Trigger (Igt) (Max)：250 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The T2180N12TOFVTXPSA1 is a high-power silicon thyristor module manufactured by Infineon Technologies. It features a reverse voltage rating of 1200 V and a nominal on-state current of 2180 A. Designed for phase control applications, the component utilizes screw mount installation and operates within a junction temperature range of -40 °C to +125 °C. The device belongs to the Thyristor-Diode Modules product category and employs standard Si technology.
Feature Summary
- Engineered for robust phase control functionality in high-current industrial environments
- Utilizes screw mount mounting style for secure mechanical integration
- Constructed with silicon technology for reliable power handling
Applications
- Industrial phase control systems
- High-power rectifier circuits
- Motor drive applications requiring high current capacity
Procurement Notes
Verify the specific suffix XPSA1 against official Infineon documentation to confirm exact ordering specifications. Ensure compatibility with required thermal management solutions given the high current rating. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement plans.
Selection Notes
Select this module when applications demand high continuous current handling at moderate voltage levels. Evaluate thermal resistance requirements carefully due to the significant power dissipation associated with 2180 A operation. Ensure gate drive circuits are compatible with the specific triggering characteristics of this thyristor type.
Part Context
This part number represents a variant within Infineon's discrete semiconductor module portfolio. The designation indicates a specific configuration within their high-power thyristor line, tailored for demanding industrial power conversion tasks. It serves as a critical component in systems requiring precise control of large electrical currents.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Cross-reference parameters such as forward voltage drop and thermal resistance when considering alternative manufacturers. Ensure any replacement maintains the same physical footprint and mounting interface.
