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T221N18BOFXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 1800V 450A NONSTAND
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：1.8 kV
- Current - On State (It (AV)) (Max)：221 A
- Current - On State (It (RMS)) (Max)：450 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：6500A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Screw Mount
- Package / Case：Nonstandard
- Voltage - Gate Trigger (Vgt) (Max)：2 V
- Current - Gate Trigger (Igt) (Max)：200 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The Infineon T221N18BOFXPSA1 is a high-power silicon thyristor module designed for demanding industrial applications. It features a maximum repetitive peak forward and reverse voltage of 1800 V, an average on-state current of 285 A at a case temperature of 70°C, and a surge current capability of 5700 A. The device utilizes a pressure-contact Si-pellet construction within a robust mechanical housing. Key thermal characteristics include a junction-to-case thermal resistance of 0.12 °C/W and a maximum junction temperature of 125°C. Electrical parameters specify a maximum on-state voltage of 1.62 V and a gate trigger current of 200 mA.
Feature Summary
- High power density with a 285 A average on-state current rating
- Robust mechanical design utilizing Si-pellet pressure contact technology
- Capable of handling significant surge currents up to 5700 A
- Integrated thermal management with low junction-to-case thermal resistance
Applications
- Industrial motor drives and variable frequency drives
- High-power DC-DC converters and rectifiers
- Static power switching in heavy machinery
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical ratings and packaging details. Confirm compliance with relevant industry standards required for your specific deployment environment before finalizing procurement orders.
Selection Notes
Evaluate the thermal requirements of the target application to ensure the heatsink can maintain the case temperature below 70°C for optimal current carrying capacity. Verify that the gate drive circuitry can supply the necessary trigger current and voltage without exceeding the non-trigger limits under all operating conditions.
Part Context
This component belongs to the T221N series of high-power thyristor modules manufactured by Infineon Technologies (formerly EUPEC). The series is engineered for robust performance in high-voltage and high-current industrial environments, providing reliable switching capabilities for critical power electronics systems.
Replacement Considerations
Consult official Infineon cross-reference guides or datasheets for verified substitute part numbers. Ensure any replacement matches the original voltage, current, and thermal specifications to maintain system integrity and safety.
FAQ
What is the maximum allowable case temperature for continuous operation?
The maximum allowable case temperature for continuous operation is 125°C.
How does the average on-state current change with case temperature?
The average on-state current is rated at 221 A at a case temperature of 85°C and increases to 285 A at a case temperature of 70°C.
What is the critical rate of rise of on-state current for this device?
The critical rate of rise of on-state current is specified as 150 A/µs under standard test conditions.
