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T2251N80TOHXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 8000V 3550A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：8 kV
- Current - On State (It (AV)) (Max)：3140 A
- Current - On State (It (RMS)) (Max)：3550 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：67000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：TO-200AF
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：350 mA
- Current - Hold (Ih) (Max)：350 mA
- Grade：-
- Qualification：-
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Overview
The T2251N80TOHXPSA1 is an Electric Triggered Phase Control (PCT) thyristor module manufactured by Infineon Technologies. It features a rated repetitive off-state voltage of 8 kV and supports a non-repetitive peak surge current of 67 kA. The device operates within a junction temperature range of -40°C to +125°C and utilizes a press-fit installation style in the T-15026K package. Key electrical parameters include a maximum holding current of 350 mA, a gate trigger voltage of 2.5 V, and a gate trigger current of 350 mA. Leakage current at rated voltage is specified at 600 mA.
Feature Summary
- Electrically triggered phase control configuration for high-power applications
- High blocking voltage capability with robust surge current handling
- Designed for direct press-fit mounting to simplify assembly
Applications
- High power rectifier circuits
- HVDC transmission systems
- Industrial motor drives
Procurement Notes
Verify the exact part number suffix against official Infineon documentation to confirm pinout and mechanical compatibility. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Ensure that the ordering information matches the specific variant required for your design specifications before procurement.
Selection Notes
Select this component based on its 8 kV voltage rating and 67 kA surge capacity requirements. Evaluate the thermal management needs relative to the specified junction temperature limits. Verify that the gate drive circuit can provide the necessary 2.5 V trigger voltage and 350 mA current for reliable turn-on under all operating conditions.
Part Context
This part belongs to Infineon's high-power thyristor portfolio, specifically designed for phase control applications. It represents a specialized solution for heavy industrial and energy infrastructure sectors where high voltage isolation and significant fault current tolerance are critical operational requirements.
Replacement Considerations
T2251N80TOH is listed as an alias for this part number. Verify mechanical dimensions and electrical characteristics against the original design requirements when substituting.
