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T2480N28TOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 2800V 5100A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：2.8 kV
- Current - On State (It (AV)) (Max)：2490 A
- Current - On State (It (RMS)) (Max)：5100 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：47500A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：DO-200AE
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：250 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The T2480N28TOFVTXPSA1 is a single-phase electrical triggered phase control thyristor module manufactured by Infineon Technologies. It features a DO-200AE package designed for base mounting applications. The device supports a maximum repetitive peak reverse voltage of 2.8 kV and handles an average on-state current of 2490 A at 180 degrees electrical conduction. Its root mean square on-state current rating reaches 5100 A, with a non-repetitive surge current capacity of 47500 A at 50 Hz. The component operates within a junction temperature range of -40°C to 125°C.
Feature Summary
- Electrical triggering mechanism for precise phase control applications
- Robust ceramic disc construction in DO-200AE housing
- High surge current capability for demanding power systems
Applications
- Industrial motor drives requiring high current handling
- HVDC transmission system components
- Static VAR compensators for power grid stability
Procurement Notes
Verify the complete part number including the XPSA1 suffix when ordering, as it denotes specific packaging or compliance variations. Confirm RoHS3 status and REACH compliance requirements with the supplier prior to purchase. Check manufacturer lead times as production cycles may extend significantly. Ensure storage conditions align with moisture sensitivity level specifications upon receipt.
Selection Notes
Select this module for applications requiring high voltage blocking and substantial continuous current capacity. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance. Ensure gate trigger parameters remain within the maximum limits of 2.5 V and 250 mA. Verify mechanical compatibility with base mounting structures given the DO-200AE form factor.
Part Context
This component belongs to Infineon's high-power thyristor portfolio, specifically designed for heavy industrial and utility-scale power electronics. The T2480N28 series represents advanced silicon technology optimized for reliability under extreme electrical stress. It serves as a critical switching element in high-voltage direct current and large-scale AC power control systems.
Replacement Considerations
Direct substitutes require matching 2.8 kV voltage rating and comparable current capabilities. Verify pinout and mechanical dimensions for DO-200AE compatibility. Cross-reference gate trigger characteristics to ensure circuit compatibility without modification.
