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Product Detailed Parameters
- Description:SCR MODULE 3600A DO200AE
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:Single
- Number of SCRs, Diodes:1 SCR
- Voltage - Off State:-
- Current - On State (It (AV)) (Max):3330 A
- Current - On State (It (RMS)) (Max):3600 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):93000A @ 50Hz
- Operating Temperature:-40°C ~ 120°C
- Mounting Type:Chassis Mount
- Package / Case:DO-200AE
- Voltage - Gate Trigger (Vgt) (Max):-
- Current - Gate Trigger (Igt) (Max):-
- Current - Hold (Ih) (Max):100 mA
- Grade:-
- Qualification:-
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Overview
The T2563N80TOHXPSA1 is a high-power thyristor module manufactured by Infineon Technologies. It belongs to the SCR module product category and utilizes Silicon (Si) technology. The component is designed for high-voltage applications, featuring an 8000 V rating for both repetitive peak reverse voltage and forward blocking voltage. It is housed in a disc package with a diameter of 172 mm and a height of 40 mm, utilizing ceramic insulation. The module supports a maximum junction temperature of 120 °C and has a unit weight of approximately 4 kg.
Feature Summary
- High power handling capability suitable for demanding industrial environments
- Robust silicon construction ensuring reliable operation at elevated temperatures
- Disc form factor design facilitating integration into large-scale power systems
Applications
- High power thyristor circuits
- Industrial phase control applications
Procurement Notes
Verify the exact part number against official Infineon documentation, as suffixes like TOH or XPSA1 may indicate specific packaging or regional variants. Confirm RoHS compliance status through the manufacturer's datasheet before procurement. Ensure export documentation requirements are met if shipping from restricted regions. Cross-reference the Mouser number 641-T2563NH80TOH for potential equivalent listings.
Selection Notes
Select this component based on its 8000 V voltage rating and 172 mm disc package dimensions. Ensure the thermal management system can handle the specified maximum junction temperature of 120 °C. Verify that the application requires a silicon-based SCR module compatible with high-power thyristor diode configurations. Check clamp force requirements against the mechanical specifications provided in the technical data.
Part Context
This part is part of Infineon's portfolio of high-power semiconductor solutions. It falls under the broader category of thyristors and specifically within the SCR modules sub-category. The product line focuses on robust, high-current devices for heavy-duty electrical engineering applications.
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