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T2600N18TOFVTXPSA1
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Product Detailed Parameters
- Description：STD THYR/DIODEN DISC BG-T10026K-
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：1.8 kV
- Current - On State (It (AV)) (Max)：2610 A
- Current - On State (It (RMS)) (Max)：4100 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：44000A @ 50Hz
- Operating Temperature：135°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：TO-200AD
- Voltage - Gate Trigger (Vgt) (Max)：2 V
- Current - Gate Trigger (Igt) (Max)：250 mA
- Current - Hold (Ih) (Max)：300 mA
- Grade：-
- Qualification：-
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Overview
The T2600N18TOFVTXPSA1 is an Electrical Triggered Phase Control Thyristor (PCT) manufactured by Infineon Technologies. It features a disc package with a diameter of 100 mm and a height of 26 mm, utilizing ceramic insulation. The device is rated for a repetitive peak reverse voltage (VRRM) and maximum repetitive peak off-state voltage (VDRM) of 1800 V. It supports a maximum average on-state current (ITAVM) of 2610 A at 180° electrical sine wave conduction. The component exhibits a maximum junction temperature (Tvj) of 135 °C and a typical gate trigger time (Tq) of 250 μs. It is designed for high-power industrial applications requiring robust phase control capabilities.
Feature Summary
- Electrical triggering mechanism eliminates the need for external pulse transformers.
- Robust ceramic-insulated disc construction ensures mechanical stability.
- High surge current capability supports demanding transient loads.
Applications
- Industrial motor drives
- HVDC transmission systems
- Static VAR compensators
Procurement Notes
Verify the exact part number against official Infineon documentation to confirm the 1800 V rating, as datasheet references for similar model numbers may vary. Ensure compatibility with specified clamping force ranges during assembly. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement orders.
Selection Notes
Select this component based on the required 1800 V blocking voltage and 2610 A continuous current capacity. Evaluate thermal management requirements considering the 135 °C maximum junction temperature limit. Verify that the electrical triggering interface aligns with the system's gate drive circuitry specifications.
Part Context
This thyristor belongs to Infineon's high-power bipolar semiconductor portfolio, specifically designed for phase control applications. It shares family characteristics with other T-series devices but is distinguished by its specific voltage and current ratings. The TO-200AB disc form factor is standard for large-scale power conversion equipment.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Cross-reference technical parameters such as VDRM, ITAVM, and package dimensions to ensure functional compatibility without modifying existing mechanical or electrical designs.
