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Product Detailed Parameters
- Description:SCR MODULE 1800V 7000A DO200AE
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:Single
- Number of SCRs, Diodes:1 SCR
- Voltage - Off State:1.8 kV
- Current - On State (It (AV)) (Max):3160 A
- Current - On State (It (RMS)) (Max):7000 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):63000A @ 50Hz
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Chassis Mount
- Package / Case:DO-200AE
- Voltage - Gate Trigger (Vgt) (Max):2.5 V
- Current - Gate Trigger (Igt) (Max):250 mA
- Current - Hold (Ih) (Max):300 mA
- Grade:-
- Qualification:-
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Overview
The T3160N18TOFVTXPSA1 is a high-power phase control thyristor (PCT) manufactured by Infineon Technologies. It features an electrical trigger configuration and is housed in a disc package with a diameter of 75mm and height of 26mm, utilizing ceramic insulation. The device supports a maximum repetitive peak off-state voltage of 1800V and handles a maximum RMS on-state current of 3160A at 180° electrical conduction. It operates within a junction temperature range of -40°C to +125°C.
Feature Summary
- Electrical triggering mechanism for precise phase control applications
- Robust construction using ceramic insulation for high-voltage isolation
- Designed for high thermal stability and reliable operation under heavy load conditions
Applications
- High-power industrial motor drives
- HVDC transmission systems
- Large-scale welding equipment
Procurement Notes
Verify the specific suffix 'VT' against official Infineon documentation to confirm the exact variant specifications. Ensure that the ordering process accounts for the manufacturer's minimum order requirements and factory production lead times, which may exceed standard shipping durations for this component class.
Selection Notes
Select this component when designing circuits requiring high current handling capabilities up to 3160A RMS. Confirm that the system's cooling infrastructure can manage the thermal resistance characteristics associated with the 75mm disc package. Validate that the gate drive circuitry meets the electrical trigger requirements for reliable turn-on at the specified voltage levels.
Part Context
This part belongs to Infineon's high-power thyristor portfolio, specifically designed for demanding power electronics applications. It shares the physical dimensions and general electrical characteristics with other models in the T3xxxN18 series, differing primarily in current ratings and specific manufacturing batches defined by the suffix codes.
Replacement Considerations
Direct substitutes include T3160N18TOFVTSP005731003. Verify mechanical fit and electrical parameters before replacing existing components in established designs.
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