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T3441N52TOHXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 5200V 5030A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：5.2 kV
- Current - On State (It (AV)) (Max)：4410 A
- Current - On State (It (RMS)) (Max)：5030 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：82000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：TO-200AF
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：350 mA
- Current - Hold (Ih) (Max)：350 mA
- Grade：-
- Qualification：-
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Overview
The T3441N52TOHXPSA1 is an Electrical Triggered Phase Control Thyristor manufactured by Infineon Technologies. It features a disc package with a diameter of 120 mm and a height of 26 mm, utilizing ceramic insulation. The device supports a repetitive peak reverse voltage (VRRM) and direct current blocking voltage (VDRM) of 5200 V. It handles a maximum average on-state current (ITAVM) of 2250 A at 180° electrical conduction and a non-repetitive surge current (ITSM) of 54000 A for 10 ms. Key electrical parameters include a maximum on-state voltage drop (VT0) of 0.81 V at maximum junction temperature, a maximum junction temperature (Tvj) of 125 °C, and a typical turn-off time (tq) of 450 μs.
Feature Summary
- High-voltage capability with 5200 V blocking rating
- Robust surge current handling up to 54000 A
- Electrical triggering mechanism for phase control applications
- Disc form factor with ceramic insulation
Applications
- High-power industrial motor drives
- HVDC transmission systems
- Static VAR compensators
Procurement Notes
Verify the exact part number against official Infineon documentation to ensure compatibility with specific thermal and mechanical requirements. Confirm that the electrical triggering characteristics align with the gate drive circuit design. Check for any specific handling instructions related to the disc package and clamp mounting forces specified in the assembly guidelines.
Selection Notes
Select this component based on the required voltage rating of 5200 V and the current carrying capacity of 2250 A. Ensure the cooling system can maintain the junction temperature below 125 °C under continuous operation. Consider the 450 μs turn-off time when designing the commutation circuitry for the phase control application.
Part Context
This thyristor belongs to Infineon's high-power bipolar semiconductor portfolio, specifically designed for electrical triggering in phase control applications. It is part of a series of disc-type devices offering high current and voltage ratings for demanding industrial power electronics environments.
Replacement Considerations
Consult Infineon's official substitution guide for equivalent models within the same voltage and current class. Verify pinout and mechanical dimensions if replacing with devices from other manufacturers.
