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T345N18EOFVTXPSA1
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Product Detailed Parameters
- Description：SCR MODULE DISC NONSTANDARD
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：-
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Non Rep. Surge 50, 60Hz (Itsm)：8000A @ 50Hz
- Operating Temperature：-
- Mounting Type：Screw Mount
- Package / Case：Nonstandard
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：-
- Current - Hold (Ih) (Max)：-
- Grade：-
- Qualification：-
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Overview
The T345N18EOFVTXPSA1 is a high-power silicon-controlled rectifier (SCR) module manufactured by Infineon Technologies. It features a disc topology with a nominal blocking voltage of 1800 V and an average on-state current rating of 345 A. The device utilizes an electrically triggered phase control configuration, designed for robust performance in demanding power conversion applications. Key electrical characteristics include a maximum repetitive peak off-state voltage of 1800 V and a non-repetitive surge current capability of 22,500 A over a 10 ms duration at maximum junction temperature. The component supports a maximum junction temperature of 125 °C and incorporates a thermal resistance from junction to case of 23 K/kW under sinusoidal conditions. Physical dimensions include a disc diameter of 75 mm and a height of 26 mm, housed in a ceramic package structure.
Feature Summary
- Electrically triggered phase control topology for precise gate drive integration
- High surge current handling capability suitable for fault conditions
- Ceramic insulated disc packaging for enhanced thermal and electrical isolation
Applications
- Industrial motor drives and variable frequency drives
- High-power DC-DC converters and power supplies
- HVDC transmission and static var compensator systems
Procurement Notes
Verify the specific suffix XPSA1 against the official Infineon naming convention to confirm RoHS compliance and tape-and-reel or tray packaging details. Confirm that the application environment does not exceed the 125 °C junction temperature limit. Ensure gate trigger parameters align with the Electric Triggered Thyristor (ETT) requirements specified in the technical data sheet. Validate mechanical clamp force specifications during installation to maintain optimal thermal contact.
Selection Notes
Select this component when high current density and robust surge withstand capability are required in phase-controlled applications. The 1800 V rating suits medium-voltage industrial systems. Consider the ceramic package for superior insulation compared to standard epoxy modules. Evaluate the thermal resistance value against the system's heatsink design to ensure adequate cooling. Compare the physical disc dimensions with available mounting structures to verify mechanical fit.
Part Context
This part belongs to Infineon's high-power thyristor and diode portfolio, specifically within the disc-type SCR category. These components are engineered for heavy-duty industrial power electronics where reliability under high stress is critical. The product line emphasizes advanced silicon technology combined with proven manufacturing processes to meet modern efficiency demands.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate driver circuits if considering alternative manufacturers. Check dimensional tolerances and pinout configurations before substituting with generic equivalents.
