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Product Detailed Parameters
- Description:SCR MODULE DISC NONSTANDARD
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:-
- Number of SCRs, Diodes:1 SCR
- Voltage - Off State:-
- Current - On State (It (AV)) (Max):-
- Current - On State (It (RMS)) (Max):-
- Current - Non Rep. Surge 50, 60Hz (Itsm):8000A @ 50Hz
- Operating Temperature:-
- Mounting Type:Screw Mount
- Package / Case:Nonstandard
- Voltage - Gate Trigger (Vgt) (Max):-
- Current - Gate Trigger (Igt) (Max):-
- Current - Hold (Ih) (Max):-
- Grade:-
- Qualification:-
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Overview
The Infineon T345N18EOFXPSA1 is a high-power silicon SCR module designed for industrial applications. It features a disc package with pressure contact and offers maximum rated repetitive peak forward/reverse voltages of 600V to 1800V. The device supports an RMS on-state current (ITRMSM) of 550 A and an average on-state current (ITAVM) of 345 A at 85°C case temperature. Surge current capacity reaches 8000 A at 25°C for 10 ms. Key thermal characteristics include a junction-to-case thermal resistance (RthJC) of 0.08 °C/W, a maximum junction temperature of 125°C, and a clamping force requirement of 5.5 kN.
Feature Summary
- High surge current capability up to 8000 A for robust fault handling
- Pressure-contact Si-pellet design ensuring reliable thermal transfer
- Wide voltage range availability from 600 V to 1800 V
- Low thermal resistance for efficient heat dissipation
Applications
- Industrial motor drives and rectifiers
- High-power DC power supplies
- Resistive heating control systems
Procurement Notes
Verify the specific voltage rating suffix required for the application, as the base model spans multiple voltage classes. Confirm that the mechanical assembly provides the mandatory 5.5 kN clamping force to ensure proper thermal interface. Check datasheet revisions for updated thermal impedance curves. Ensure gate trigger parameters align with the driver circuit capabilities.
Selection Notes
Select based on the required blocking voltage level within the 600 V to 1800 V range. Evaluate thermal management requirements against the 0.08 °C/W junction-to-case resistance. Verify that the gate drive can supply at least 200 mA trigger current. Consider the critical di/dt limit of 150 A/µs when designing snubber circuits or commutation paths.
Part Context
This component belongs to the T 345 N series of high-power thyristor modules manufactured by Infineon Technologies. These modules utilize silicon pellet technology with pressure contacts, distinguishing them from soldered alternatives. The series is engineered for heavy-duty industrial environments requiring high current density and rugged operational reliability.
Replacement Considerations
Direct replacements must match the 345 A average current and 550 A RMS current ratings. Verify identical mechanical dimensions for DIN 41894-224 mounting compatibility. Ensure the replacement device meets the same 5.5 kN clamping force specification and 125°C maximum junction temperature limits.
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