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Product Detailed Parameters
- Description:T38001phacontrthyristdis3800A
- Series:-
- Mfr:Infineon Technologies
- Package:Bulk
- Structure:Single
- Number of SCRs, Diodes:1 SCR
- Voltage - Off State:1.8 kV
- Current - On State (It (AV)) (Max):3800 A
- Current - On State (It (RMS)) (Max):5970 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):63000A @ 50Hz
- Operating Temperature:135°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:TO-200AE
- Voltage - Gate Trigger (Vgt) (Max):2.5 V
- Current - Gate Trigger (Igt) (Max):250 mA
- Current - Hold (Ih) (Max):300 mA
- Grade:-
- Qualification:-
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Overview
The T3800N18TOFVTXPSA1 is a high-power Silicon Controlled Rectifier (SCR) module manufactured by Infineon Technologies. It features a TO-200AE package and supports a repetitive peak reverse voltage of 1800 V. The device handles a maximum average on-state current of 5970 A and an RMS on-state current of 5970 A. Gate triggering specifications include a maximum gate trigger voltage of 2.5 V and a maximum gate trigger current of 250 mA. Non-repetitive surge current capacity reaches 63000 A at 50 Hz.
Feature Summary
- High current handling capability for heavy industrial power control applications
- Robust surge current tolerance designed for demanding electrical environments
- Standardized TO-200AE mounting format for integration into existing thermal management systems
Applications
- Industrial motor drives and variable frequency drives
- High-power rectification in DC transmission systems
- Resistive heating control for industrial furnaces
Procurement Notes
Verify the specific suffix and full part number against official Infineon documentation to ensure correct voltage and current ratings. Confirm package compatibility with existing heatsink interfaces. Check for RoHS compliance status through authorized channels. Validate lead times directly with the manufacturer or certified distributors, as production cycles may vary significantly for high-power semiconductor modules.
Selection Notes
Select this component based on the required 1800 V blocking voltage and 5970 A continuous current rating. Ensure the gate drive circuit can supply at least 250 mA at 2.5 V for reliable triggering. Verify that the system's thermal design can manage the junction temperature within specified limits under full load conditions. Consider the physical dimensions of the TO-200AE package for mechanical fitment.
Part Context
This module belongs to the T3800N series of high-power thyristors from Infineon Technologies. The series is engineered for extreme current applications, utilizing advanced silicon wafer technology to achieve high reliability. These devices are typically used in infrastructure requiring robust power switching capabilities.
Replacement Considerations
Direct replacements must match the 1800 V rating, 5970 A current capacity, and TO-200AE package. Verify equivalent gate trigger characteristics and thermal resistance values. Cross-reference with other manufacturers' high-power SCR modules offering similar electrical specifications and mounting standards.
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