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The T4M10T800UE-13 is a bidirectional thyristor (Triac) manufactured by Diodes Incorporated, designed for surface-mount applications in the TO-252 (DPAK) package. It features an RMS on-state current of 4 A and a rated repetitive peak off-state voltage of 800 V. The device exhibits a maximum on-state voltage of 1.6 V and a non-repetitive peak on-state current capability of 30 A at 50/60 Hz. Gate triggering requirements include a maximum gate trigger voltage of 1.3 V and a gate trigger current of 10 mA. The component operates within a junction temperature range of -40°C to +125°C.
Verify the specific suffix 'UE-13' against the manufacturer's official datasheet to confirm packaging configuration and tape-and-reel specifications. Ensure that the ordering information matches the exact part number to avoid discrepancies in lead times or package variants. Cross-reference the RoHS compliance status with the latest environmental declaration provided by Diodes Incorporated prior to final procurement decisions.
Select this component when a surface-mount Triac with 800 V blocking voltage and 4 A RMS current rating is required. Compare the 1.6 V on-state voltage and 10 mA gate trigger current against system drive capabilities. Ensure the thermal management design accommodates the TO-252 package dissipation characteristics within the specified -40°C to +125°C operating temperature range.
This part belongs to the T4 series of Triacs from Diodes Incorporated, which are engineered for general-purpose AC switching applications. The series offers various current ratings and package options, including through-hole and surface-mount configurations. The T4M10T800UE-13 specifically addresses the need for compact, high-voltage AC control in modern electronics manufacturing.
Publicly confirmed substitute part numbers for T4M10T800UE-13 were not identified in the provided reference data. Verify compatibility with alternative Triacs based on matching electrical parameters such as VDRM, IT(RMS), and package type before substitution.