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T501N65TOHXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 7000V 1000A DO200AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：7 kV
- Current - On State (It (AV)) (Max)：890 A
- Current - On State (It (RMS)) (Max)：1000 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：13500A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Clamp On
- Package / Case：TO-200AC
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：350 mA
- Current - Hold (Ih) (Max)：350 mA
- Grade：-
- Qualification：-
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Overview
The T501N65TOHXPSA1 is a high-power silicon SCR module manufactured by Infineon Technologies. It features a rated repetitive off-state voltage of 6.5 kV and a non-repetitive peak surge current capability of 13.5 kA. The device has an average on-state current rating of 860 A and operates within a junction temperature range of -40°C to +125°C. Electrical characteristics include a maximum holding current of 350 mA, a gate trigger voltage of 2.5 V, and a gate trigger current of 350 mA. The component utilizes a press-fit mounting style in the T-7626K package.
Feature Summary
- High power thyristor module designed for demanding industrial applications
- Robust construction with high surge current handling capability
- Optimized thermal performance for efficient heat dissipation
Applications
- Industrial motor drives
- HVDC transmission systems
- Static VAR compensators
Procurement Notes
Verify the exact part number suffix against official Infineon documentation to ensure correct configuration. Confirm that the T-7626K package dimensions match your mechanical design requirements. Ensure compatibility with press-fit assembly tools and verify thermal interface material specifications for optimal heat transfer during installation.
Selection Notes
Select this module based on the required 6.5 kV blocking voltage and 860 A continuous current ratings. Consider the 13.5 kA surge capacity for fault protection scenarios. Evaluate the gate drive requirements against the specified 2.5 V and 350 mA trigger parameters. Assess the operating temperature range limits for your specific environmental conditions.
Part Context
This component belongs to Infineon's high-power thyristor module portfolio, specifically engineered for heavy-duty industrial power conversion. The T501 series represents advanced silicon technology optimized for high voltage and high current applications. These modules are integral to large-scale electrical infrastructure and industrial machinery requiring reliable high-power switching capabilities.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 6.5 kV voltage rating, 860 A current rating, and T-7626K package form factor. Verify identical electrical characteristics including gate trigger parameters and thermal resistance values before implementation.
