T560N18TOFXPSA1

T560N18TOFXPSA1

$88.89
  • Description:SCR MODULE 1800V 809A DO200AA
  • Series:-

SKU:a6e49d80b275 Category: Brand:

  
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Product Detailed Parameters

  • Description:SCR MODULE 1800V 809A DO200AA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Structure:Single
  • Number of SCRs, Diodes:1 SCR
  • Voltage - Off State:1.8 kV
  • Current - On State (It (AV)) (Max):559 A
  • Current - On State (It (RMS)) (Max):809 A
  • Current - Non Rep. Surge 50, 60Hz (Itsm):8000A @ 50Hz
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Clamp On
  • Package / Case:DO-200AA, A-PUK
  • Voltage - Gate Trigger (Vgt) (Max):2 V
  • Current - Gate Trigger (Igt) (Max):200 mA
  • Current - Hold (Ih) (Max):300 mA
  • Grade:-
  • Qualification:-

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T560N18TOFXPSA1

Overview

The Infineon T560N18TOFXPSA1 is a silicon phase control thyristor module rated for 1800 V repetitive peak reverse voltage and 560 A average on-state current. It features a disc package with a 48 mm diameter and 14 mm height, utilizing ceramic insulation. The device supports screw mounting with a recommended clamping force between 5 and 10 kN. Key electrical parameters include a maximum junction temperature of 125°C, a gate trigger current of 200 mA, and a surge current rating of 8 kA for 10 ms duration.

Feature Summary

  • Electrical triggering capability for precise phase control applications
  • Robust mechanical design with specified clamping force requirements for secure installation
  • High thermal stability supporting operation up to 125°C junction temperature

Applications

  • Industrial motor drives requiring high power phase control
  • Resistive heating systems with significant current demands
  • DC to AC inversion circuits in power conversion equipment

Procurement Notes

Verify the specific suffix XPSA1 against official Infineon documentation to confirm RoHS compliance and lead time status. Confirm that the ordering part number matches the exact voltage and current ratings required for the target application circuit. Ensure compatibility with standard disc mounting hardware specifications.

Selection Notes

Select this component when an 1800 V blocking voltage and 560 A continuous current capacity are required. Evaluate the thermal resistance characteristics against the available heatsinking solution to ensure junction temperatures remain within limits. Consider the 200 mA gate trigger requirement for driver circuit design compatibility.

Part Context

This model belongs to the T560N series of high-power silicon thyristors manufactured by Infineon Technologies. The series is designed for demanding industrial power electronics applications. The TOF designation indicates the specific packaging and terminal configuration used for this product line.

Replacement Considerations

Direct substitutes include T560N18TOF and T560N18TOFXPSA1 variants with identical electrical ratings. Verify pinout and mechanical dimensions before substitution. Cross-reference with T560N16TOF or T560N14TOF only if lower voltage ratings are acceptable.

T560N18TOFXPSA1T560N18TOFXPSA1
$88.89
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