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Product Detailed Parameters
- Description:SCR MODULE 1800V 1250A DO200AA
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:Single
- Number of SCRs, Diodes:1 SCR
- Voltage - Off State:1.8 kV
- Current - On State (It (AV)) (Max):644 A
- Current - On State (It (RMS)) (Max):1250 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):9400A @ 50Hz
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Clamp On
- Package / Case:DO-200AA, A-PUK
- Voltage - Gate Trigger (Vgt) (Max):2.2 V
- Current - Gate Trigger (Igt) (Max):250 mA
- Current - Hold (Ih) (Max):300 mA
- Grade:-
- Qualification:-
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Overview
The T640N18TOFXPSA1 is a high-power silicon phase control thyristor manufactured by Infineon Technologies. It features a disc button package design with a repetitive peak reverse voltage of 1800 V and an average on-state current rating of 640 A. The device supports a surge current capacity of 12 kA for 10 ms durations. Key electrical characteristics include a maximum gate trigger current of 250 mA and a maximum junction temperature of 125 °C. The component utilizes screw mounting for secure installation in industrial power applications.
Feature Summary
- High blocking voltage capability suitable for demanding power conversion environments
- Robust surge current handling for transient load protection
- Standardized disc form factor for compatibility with established thermal management systems
Applications
- Industrial motor drives and variable frequency drives
- High-power DC to AC inversion systems
- Resistive heating control circuits
Procurement Notes
Verify the specific suffix XPSA1 against official Infineon documentation to confirm exact manufacturing lot specifications and compliance status. Ensure that the ordering information matches the precise technical requirements for your application, as minor variations in suffixes can indicate differences in packaging or testing criteria. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and traceability before finalizing procurement.
Selection Notes
Select this component when designing systems requiring 1800 V blocking voltage and 640 A continuous current handling. Evaluate the thermal resistance and required clamping force to ensure reliable operation within the specified junction temperature limits. Confirm that the gate drive circuitry can supply the necessary trigger current without exceeding maximum ratings. Consider the physical dimensions and mounting style to ensure compatibility with existing heat sink infrastructure.
Part Context
This thyristor belongs to Infineon's high-power discrete semiconductor portfolio, specifically designed for phase control applications. It represents a standard offering in the company's line of silicon-based power devices, engineered for durability in heavy-duty industrial settings. The product aligns with industry standards for large-scale power electronics used in energy conversion and industrial automation sectors.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalent parts. Do not assume cross-compatibility with other manufacturers' devices without rigorous electrical and mechanical validation. Verify that any alternative component meets or exceeds the original voltage, current, and thermal specifications.
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